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ST STGF10NC60KD

Manufacturer
ST
MPN
STGF10NC60KD
LCSC Part #
C2802546
Packaging
TO-220FP
Customer #
Key Attributes
IGBT 600V 9A TO-220FP
DatasheetST STGF10NC60KD
RoHS Compliance1 documents available
Alternative Parts5
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/IGBTs/Single IGBTs
ManufacturerST
PackagingTO-220FP
Td(off)72ns
Pd - Power Dissipation25W
Td(on)17ns
Current - Collector(Ic)9A
Collector-Emitter Breakdown Voltage (Vces)600V
Reverse Transfer Capacitance (Cres)8.5pF
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4.5V@250uA
Operating Temperature-55℃~+150℃@(Tj)
Vce Saturation(VCE(sat))2.5V@5A,15V
Collector Cut-Off Current (Ices)-
Reverse Recovery Time(trr)22ns
Switching Energy(Eoff)85uJ
Turn-On Energy (Eon)55uJ
Input Capacitance(Cies)380pF
Output Capacitance(Coes)46pF
Gate Charge(Qg)19nC
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Introduction

AI Translation

These devices are very fast IGBTs developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications.

Features

AI Translation
  • Lower on voltage drop (VCE(sat))
  • Lower CRES / CIES ratio (no cross-conduction susceptibility)
  • Very soft ultra fast recovery antiparallel diode
  • Short-circuit withstand time 10 μs

Applications

AI Translation
  • High frequency motor controls
  • SMPS and PFC in both hard switch and resonant topologies
  • Motor drives