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XTX XT27G01ATSIGA

Manufacturer
XTXAsian Brands
MPN
XT27G01ATSIGA
LCSC Part #
C2759960
Packaging
TSOPI-48
Customer #
Key Attributes
Parallel SLC-NAND
DatasheetXTX XT27G01ATSIGA
RoHS Compliance1 documents available
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryIntegrated Circuits (ICs)/Memory/Memory
ManufacturerXTX
PackagingTSOPI-48
Operating Temperature-40℃~+85℃
FeaturesRead buffer function;Copy back write function;Software reset function;ECC error correction function;Hardware write protection function
Memory Size1Gbit
Voltage - Supply2.7V~3.6V
Program / Erase Cycles-
Clock Frequency40MHz
Data Retention - TDR (Year)10 years
Block Erase Time(tBE)2.5ms
Write Cycle Time(tWC)25ns
Page Programming Time (Tpp)300us
Standby Supply Current50uA
InterfaceParallel

Introduction

AI Translation

The XT27G01A is a single 3.3v 1Gbit NAND Electrically Erasable and Programmable Read- Only Memory (NAND E2PROM) organized as (2048 + 128) bytes × 64 pages × 1024 blocks. The device has a 2176- byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2176- byte increments. The Erase operation is implemented in a single block unit (128 Kbytes + 8 Kbytes: 2176 bytes × 64 pages). The XT27G01A is a serial- type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid- state file storage, voice recording, image file memory for still cameras and other systems which require high- density non- volatile memory data storage.

Features

AI Translation
  • Single Level per Cell (SLC) Technology
  • ECC requirement: 8bit/512Bytes
  • Power Supply Voltage
    • Voltage range: 2.7V ~ 3.6V

Applications

AI Translation
  • solid- state file storage
  • voice recording
  • image file memory for still cameras
  • other systems which require high- density non- volatile memory data storage