Jilin Sino-Microelectronics JCS4N60RC
| Manufacturer | Jilin Sino-MicroelectronicsAsian Brands |
| MPN | JCS4N60RC |
| LCSC Part # | C2693246 |
| Packaging | DPAK |
| Customer # | |
| Key Attributes | MOSFET 600V 4A DPAK |
| Datasheet | Jilin Sino-Microelectronics JCS4N60RC |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Jilin Sino-Microelectronics | |
| Packaging | DPAK | |
| Output Capacitance(Coss) | 100pF | |
| Ciss-Input Capacitance | 860pF | |
| Pd - Power Dissipation | 159.2W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 4A | |
| Reverse Transfer Capacitance (Crss) | 15pF | |
| RDS(on) | 2.5Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 25nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Jilin Sino-Microelectronics | |
| Packaging | DPAK | |
| Output Capacitance(Coss) | 100pF | |
| Ciss-Input Capacitance | 860pF | |
| Pd - Power Dissipation | 159.2W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 4A | |
| Reverse Transfer Capacitance (Crss) | 15pF | |
| RDS(on) | 2.5Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 25nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This power MOSFET is manufactured using Truesemi's advanced planar stripe DMOS technology. This latest technology is specifically designed to minimize on-resistance while providing high avalanche ruggedness. These devices are ideal for high-efficiency switch-mode power supplies, active power factor correction, and electronic lamp ballasts based on half-bridge topologies.
Features
AI Translation
- Low gate charge
- Low Crss (typical 3.06pF)
- Fast switching speed
- 100% avalanche tested
- High dv/dt immunity
- RoHS compliant
Applications
AI Translation
- High-frequency switch-mode power supplies
- Electronic ballasts
- LED power supplies
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Jilin Sino-Microelectronics | |
| Packaging | DPAK | |
| Output Capacitance(Coss) | 100pF | |
| Ciss-Input Capacitance | 860pF | |
| Pd - Power Dissipation | 159.2W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 4A | |
| Reverse Transfer Capacitance (Crss) | 15pF | |
| RDS(on) | 2.5Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 25nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Jilin Sino-Microelectronics | |
| Packaging | DPAK | |
| Output Capacitance(Coss) | 100pF | |
| Ciss-Input Capacitance | 860pF | |
| Pd - Power Dissipation | 159.2W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 4A | |
| Reverse Transfer Capacitance (Crss) | 15pF | |
| RDS(on) | 2.5Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 25nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This power MOSFET is manufactured using Truesemi's advanced planar stripe DMOS technology. This latest technology is specifically designed to minimize on-resistance while providing high avalanche ruggedness. These devices are ideal for high-efficiency switch-mode power supplies, active power factor correction, and electronic lamp ballasts based on half-bridge topologies.
Features
AI Translation
- Low gate charge
- Low Crss (typical 3.06pF)
- Fast switching speed
- 100% avalanche tested
- High dv/dt immunity
- RoHS compliant
Applications
AI Translation
- High-frequency switch-mode power supplies
- Electronic ballasts
- LED power supplies
C2693246 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



