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Jilin Sino-Microelectronics JCS4N60RC

Manufacturer
MPN
JCS4N60RC
LCSC Part #
C2693246
Packaging
DPAK
Customer #
Key Attributes
MOSFET 600V 4A DPAK
DatasheetJilin Sino-Microelectronics JCS4N60RC
Alternative Parts5
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerJilin Sino-Microelectronics
PackagingDPAK
Output Capacitance(Coss)100pF
Ciss-Input Capacitance860pF
Pd - Power Dissipation159.2W
Configuration-
Operating Temperature-55℃~+150℃
Drain to Source Voltage600V
Current - Continuous Drain(Id)4A
Reverse Transfer Capacitance (Crss)15pF
RDS(on)2.5Ω@10V
Number1 N-channel
Gate Charge(Qg)25nC@10V
Vgs±30V
Gate Threshold Voltage (Vgs(th))4V
TypeN-Channel

Introduction

AI Translation

This power MOSFET is manufactured using Truesemi's advanced planar stripe DMOS technology. This latest technology is specifically designed to minimize on-resistance while providing high avalanche ruggedness. These devices are ideal for high-efficiency switch-mode power supplies, active power factor correction, and electronic lamp ballasts based on half-bridge topologies.

Features

AI Translation
  • Low gate charge
  • Low Crss (typical 3.06pF)
  • Fast switching speed
  • 100% avalanche tested
  • High dv/dt immunity
  • RoHS compliant

Applications

AI Translation
  • High-frequency switch-mode power supplies
  • Electronic ballasts
  • LED power supplies