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GigaDevice Semicon Beijing GD25Q64ESIG

Manufacturer
MPN
GD25Q64ESIG
LCSC Part #
C2685734
Packaging
SOP-8-208mil
Customer #
Key Attributes
Dual and Quad Serial Flash
DatasheetGigaDevice Semicon Beijing GD25Q64ESIG
Alternative Parts5
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryIntegrated Circuits (ICs)/Memory/Memory
ManufacturerGigaDevice Semicon Beijing
PackagingSOP-8-208mil
Operating Temperature-
FeaturesWrite enable latch;Hardware Write Protection;Software Write Protection;Absolute Write Protection
Memory Size64Mbit
Voltage - Supply2.7V~3.6V
Program / Erase Cycles100,000 cycles
Clock Frequency133MHz
Data Retention - TDR (Year)20 Years
Block Erase Time(tBE)250ms@(64KB)
Write Cycle Time(tWC)-
Page Programming Time (Tpp)500us
Standby Supply Current12uA
InterfaceSPI

Introduction

AI Translation

The GD25Q64E (64M-bit) Serial flash supports the standard Serial Peripheral Interface (SPI), and the Dual/Quad SPI: Serial Clock, Chip Select, Serial Data I/O0 (SI), I/O1 (SO), I/O2 (WP#), I/O3 (HOLD#). The Dual I/O data is transferred with speed of 266Mbit/s, and the Quad I/O data is transferred with speed of 532Mbit/s.

Features

AI Translation
  • 64M-bit Serial Flash - 8192K-Byte - 256 Bytes per programmable page
  • Standard, Dual, Quad SPI - Standard SPI: SCLK, CS#, SI, SO, WP#, HOLD# - Dual SPI: SCLK, CS#, IO0, IO1, WP#, HOLD# - Quad SPI: SCLK, CS#, IO0, IO1, IO2, IO3
  • High Speed Clock Frequency - 133MHz for fast read - Dual I/O Data transfer up to 266Mbits/s - Quad I/O Data transfer up to 532Mbits/s
  • Software/Hardware Write Protection - Write protect all/portion of memory via software - Enable/Disable protection with WP# Pin - Top/Bottom Block protection
  • Endurance and Data Retention - Minimum 100,000 Program/Erase Cycles - 20-year data retention typical
  • Allows XiP (eXecute In Place) Operation - High speed Read reduce overall XiP instruction fetch time - Continuous Read with Wrap further reduce data latency to fill up SoC cache
  • Fast Program/Erase Speed - Page Program time: 0.5ms typical - Sector Erase time: 45ms typical - Block Erase time: 0.15s/0.25s typical - Chip Erase time: 25s typical
  • Flexible Architecture - Uniform Sector of 4K-Byte - Uniform Block of 32/64K-Byte
  • Low Power Consumption - 12μA typical standby current - 1μA typical deep power down current
  • Advanced Security Features - 128-bit Unique ID for each device - Serial Flash Discoverable parameters (SFDP) register - 3x1024-Byte Security Registers With OTP Locks
  • Single Power Supply Voltage - Full voltage range: 2.7-3.6V