STANSON Tech. STC6301D
| Manufacturer | STANSON Tech.Asian Brands |
| MPN | STC6301D |
| LCSC Part # | C2682885 |
| Packaging | TO-252-4 |
| Customer # | |
| Key Attributes | MOSFET N-CH+P-CH ARR 60V 23A TO-252-4 |
| Datasheet | STANSON Tech. STC6301D |
| RoHS Compliance | 1 documents available |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | STANSON Tech. | |
| Packaging | TO-252-4 | |
| Output Capacitance(Coss) | - | |
| Pd - Power Dissipation | 34.7W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 23A;18A | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 45mΩ@10V;60mΩ@10V;28mΩ@4.5V;65mΩ@4.5V | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 12.6nC@4.5V;9.9nC@4.5V | |
| Vgs | ±20V | |
| Type | N-Channel + P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | STANSON Tech. | |
| Packaging | TO-252-4 | |
| Output Capacitance(Coss) | - | |
| Pd - Power Dissipation | 34.7W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 23A;18A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 45mΩ@10V;60mΩ@10V;28mΩ@4.5V;65mΩ@4.5V | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 12.6nC@4.5V;9.9nC@4.5V | |
| Vgs | ±20V | |
| Type | N-Channel + P-Channel |
Introduction
STC6301D is an N-channel and P-channel enhancement-mode power MOSFET fabricated using high cell density DMOS trench technology. This high-density process is specifically designed to minimize on-resistance and deliver superior switching performance. The device is particularly suited for low-voltage applications such as power management, where high-side switching, low in-line power dissipation, and transient immunity are required.
Features
- N-Channel
- 60V/8.0A, RDS(ON) = 37mΩ at VGS = 10V
- 60V/5.0A, RDS(ON) = 28mΩ at VGS = 4.5V
- P-Channel
- 60V/-5.0A, RDS(ON) = 46mΩ at VGS = -10V
- 60V/-3.0A, RDS(ON) = 65mΩ at VGS = -4.5V
- Ultra-high density cell design for extremely low RDS(ON)
- Excellent on-resistance and maximum DC current capability
Applications
- Mobile phone and laptop power management – other battery-powered circuits
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.2721 | $ 1.36 |
| 50+ | $ 0.2153 | $ 10.77 |
| 150+ | $ 0.191 | $ 28.65 |
| 500+ | $ 0.153 | $ 76.50 |
| 2,500+ | $ 0.1394 | $ 348.50 |
| 5,000+ | $ 0.1313 | $ 656.50 |
Standard Packaging2500/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | STANSON Tech. | |
| Packaging | TO-252-4 | |
| Output Capacitance(Coss) | - | |
| Pd - Power Dissipation | 34.7W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 23A;18A | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 45mΩ@10V;60mΩ@10V;28mΩ@4.5V;65mΩ@4.5V | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 12.6nC@4.5V;9.9nC@4.5V | |
| Vgs | ±20V | |
| Type | N-Channel + P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | STANSON Tech. | |
| Packaging | TO-252-4 | |
| Output Capacitance(Coss) | - | |
| Pd - Power Dissipation | 34.7W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 23A;18A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 45mΩ@10V;60mΩ@10V;28mΩ@4.5V;65mΩ@4.5V | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 12.6nC@4.5V;9.9nC@4.5V | |
| Vgs | ±20V | |
| Type | N-Channel + P-Channel |
Introduction
STC6301D is an N-channel and P-channel enhancement-mode power MOSFET fabricated using high cell density DMOS trench technology. This high-density process is specifically designed to minimize on-resistance and deliver superior switching performance. The device is particularly suited for low-voltage applications such as power management, where high-side switching, low in-line power dissipation, and transient immunity are required.
Features
- N-Channel
- 60V/8.0A, RDS(ON) = 37mΩ at VGS = 10V
- 60V/5.0A, RDS(ON) = 28mΩ at VGS = 4.5V
- P-Channel
- 60V/-5.0A, RDS(ON) = 46mΩ at VGS = -10V
- 60V/-3.0A, RDS(ON) = 65mΩ at VGS = -4.5V
- Ultra-high density cell design for extremely low RDS(ON)
- Excellent on-resistance and maximum DC current capability
Applications
- Mobile phone and laptop power management – other battery-powered circuits
C2682885 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



