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STANSON Tech. STP413D

Manufacturer
STANSON Tech.Asian Brands
MPN
STP413D
LCSC Part #
C2682829
Packaging
TO-252
Customer #
Key Attributes
MOSFET P-CH 40V 12A TO-252
DatasheetSTANSON Tech. STP413D
RoHS Compliance1 documents available
Alternative Parts3
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerSTANSON Tech.
PackagingTO-252
Output Capacitance(Coss)69pF
Ciss-Input Capacitance900pF
Pd - Power Dissipation50W
Configuration-
Operating Temperature-55℃~+150℃
Drain to Source Voltage40V
Current - Continuous Drain(Id)12A
Reverse Transfer Capacitance (Crss)115pF
RDS(on)36mΩ@10V;52mΩ@4.5V
Number1 P-Channel
Gate Charge(Qg)16.5nC@10V
Vgs±20V
Gate Threshold Voltage (Vgs(th))2.5V
TypeP-Channel
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Introduction

AI Translation

STP413D is a P-channel logic-level enhancement-mode power MOSFET fabricated using high cell density DMOS trench technology. The device is specifically designed to improve the overall efficiency of DC/DC converters employing synchronous or conventional switching PWM controllers. It is optimized for low gate charge, low RDS(ON), and fast switching speed.

Features

AI Translation
  • -40V/-12.0A, R DS(ON) = 36mΩ (typical) at VGS = -10V
  • -40V/-8.0A, R DS(ON) = 52mΩ at VGS = -4.5V
  • Ultra-high density cell design for extremely low RDS(ON)
  • Excellent on-resistance and maximum DC current capability
  • TO-252, TO-251 package