15% OFF
- Pinout
- Footprint
Images for reference only
EDA ModelsEasyEDA
VBsemi Elec STP60N06-14-VB
| Manufacturer | VBsemi ElecAsian Brands |
| MPN | STP60N06-14-VB |
| LCSC Part # | C2680887 |
| Packaging | TO-220AB |
| Customer # | |
| Key Attributes | MOSFET N-CH 60V 60A TO-220AB |
| Datasheet | VBsemi Elec STP60N06-14-VB |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | TO-220AB | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 570pF | |
| Current - Continuous Drain(Id) | 60A | |
| Ciss-Input Capacitance | 4.2nF | |
| Pd - Power Dissipation | 136W | |
| Reverse Transfer Capacitance (Crss) | 325pF | |
| RDS(on) | 11mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 47nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | TO-220AB | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 570pF | |
| Current - Continuous Drain(Id) | 60A | |
| Ciss-Input Capacitance | 4.2nF |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 136W | |
| Reverse Transfer Capacitance (Crss) | 325pF | |
| RDS(on) | 11mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 47nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- Junction temperature 175°C
- Trench power MOSFET
- Material classification: RoHS compliant
- N-channel MOSFET
Applications
AI Translation
- Laptop CPU core - high-end switching
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | TO-220AB | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 570pF | |
| Current - Continuous Drain(Id) | 60A | |
| Ciss-Input Capacitance | 4.2nF | |
| Pd - Power Dissipation | 136W | |
| Reverse Transfer Capacitance (Crss) | 325pF | |
| RDS(on) | 11mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 47nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | TO-220AB | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 570pF | |
| Current - Continuous Drain(Id) | 60A | |
| Ciss-Input Capacitance | 4.2nF |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 136W | |
| Reverse Transfer Capacitance (Crss) | 325pF | |
| RDS(on) | 11mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 47nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- Junction temperature 175°C
- Trench power MOSFET
- Material classification: RoHS compliant
- N-channel MOSFET
Applications
AI Translation
- Laptop CPU core - high-end switching
C2680887 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |