Infineon IRFB4227PBF
| Manufacturer | |
| MPN | IRFB4227PBF |
| LCSC Part # | C2652 |
| Packaging | TO-220AB |
| Customer # | |
| Key Attributes | MOSFET N-CH 200V 65A TO-220AB |
| Datasheet | Infineon IRFB4227PBF |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 5 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-220AB | |
| Output Capacitance(Coss) | 460pF | |
| Ciss-Input Capacitance | 4.6nF | |
| Pd - Power Dissipation | 330W | |
| Configuration | - | |
| Operating Temperature | -40℃~+175℃ | |
| Drain to Source Voltage | 200V | |
| Current - Continuous Drain(Id) | 65A | |
| Reverse Transfer Capacitance (Crss) | 91pF | |
| RDS(on) | 24mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 98nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-220AB | |
| Output Capacitance(Coss) | 460pF | |
| Ciss-Input Capacitance | 4.6nF | |
| Pd - Power Dissipation | 330W | |
| Configuration | - | |
| Operating Temperature | -40℃~+175℃ | |
| Drain to Source Voltage | 200V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 65A | |
| Reverse Transfer Capacitance (Crss) | 91pF | |
| RDS(on) | 24mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 98nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Type | N-Channel |
Introduction
This HEXFET Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EpuLsE rating. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Features
- Advanced Process Technology
- Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications
- Low EpULsE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications
- Low QG for Fast Response
- High Repetitive Peak Current Capability for Reliable Operation
- Short Fall & Rise Times for Fast Switching
- 175°C Operating Junction Temperature for Improved Ruggedness
- Repetitive Avalanche Capability for Robustness and Reliability
- Class-D Audio Amplifier 300W - 500W (Half-bridge)
Applications
- Switch Mode Power Supply (SMPS)
- Uninterruptible Power Supply
- High-speed power switch
- Hard-switching and high-frequency circuits
- Lead-free
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-220AB | |
| Output Capacitance(Coss) | 460pF | |
| Ciss-Input Capacitance | 4.6nF | |
| Pd - Power Dissipation | 330W | |
| Configuration | - | |
| Operating Temperature | -40℃~+175℃ | |
| Drain to Source Voltage | 200V | |
| Current - Continuous Drain(Id) | 65A | |
| Reverse Transfer Capacitance (Crss) | 91pF | |
| RDS(on) | 24mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 98nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-220AB | |
| Output Capacitance(Coss) | 460pF | |
| Ciss-Input Capacitance | 4.6nF | |
| Pd - Power Dissipation | 330W | |
| Configuration | - | |
| Operating Temperature | -40℃~+175℃ | |
| Drain to Source Voltage | 200V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 65A | |
| Reverse Transfer Capacitance (Crss) | 91pF | |
| RDS(on) | 24mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 98nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Type | N-Channel |
Introduction
This HEXFET Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EpuLsE rating. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Features
- Advanced Process Technology
- Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications
- Low EpULsE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications
- Low QG for Fast Response
- High Repetitive Peak Current Capability for Reliable Operation
- Short Fall & Rise Times for Fast Switching
- 175°C Operating Junction Temperature for Improved Ruggedness
- Repetitive Avalanche Capability for Robustness and Reliability
- Class-D Audio Amplifier 300W - 500W (Half-bridge)
Applications
- Switch Mode Power Supply (SMPS)
- Uninterruptible Power Supply
- High-speed power switch
- Hard-switching and high-frequency circuits
- Lead-free
C2652 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



