LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
ST STD9N60M2 product image
  • STD9N60M2 thumbnail 1
  • STD9N60M2 thumbnail 2
  • STD9N60M2 thumbnail 3
  • Pinout
  • Footprint
Images for reference only

ST STD9N60M2

Manufacturer
ST
MPN
STD9N60M2
LCSC Part #
C262934
Packaging
DPAK
Customer #
Key Attributes
MOSFET N-CH 600V 5.5A DPAK
DatasheetST STD9N60M2
RoHS Compliance3 documents available
Alternative Parts5
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerST
PackagingDPAK
Output Capacitance(Coss)18pF
Ciss-Input Capacitance320pF
Pd - Power Dissipation60W
Configuration-
Operating Temperature-55℃~+150℃
Drain to Source Voltage600V
Current - Continuous Drain(Id)5.5A
Reverse Transfer Capacitance (Crss)0.68pF
RDS(on)780mΩ@10V
Number1 N-channel
Gate Charge(Qg)10nC@10V
Vgs±25V
Gate Threshold Voltage (Vgs(th))4V
TypeN-Channel
Help & FeedbackShow similar products (0) >

Introduction

AI Translation

These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters.

Features

AI Translation
  • Extremely low gate charge
  • Excellent output capacitance (Coss) profile
  • 100% avalanche tested
  • Zener-protected

Applications

AI Translation
  • Switching applications