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Infineon IRF5210STRLPBF
| Manufacturer | |
| MPN | IRF5210STRLPBF |
| LCSC Part # | C2622 |
| Packaging | D2PAK |
| Customer # | |
| Key Attributes | MOSFET P-CH 100V 38A D2PAK |
| Datasheet | Infineon IRF5210STRLPBF |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | D2PAK | |
| Output Capacitance(Coss) | 800pF | |
| Pd - Power Dissipation | 170W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 38A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 430pF | |
| RDS(on) | 60mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 2.78nF | |
| Gate Charge(Qg) | 230nC@10V | |
| Vgs | ±20V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | D2PAK | |
| Output Capacitance(Coss) | 800pF | |
| Pd - Power Dissipation | 170W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 38A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 430pF | |
| RDS(on) | 60mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 2.78nF | |
| Gate Charge(Qg) | 230nC@10V | |
| Vgs | ±20V | |
| Type | P-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications.
Features
AI Translation
- Advanced Process Technology
- Ultra Low On-Resistance
- 150°C Operating Temperature
- Fast Switching
- Repetitive Avalanche Allowed up to Tjmax
- P-Channel
- Lead-Free
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
In-Stock: 19,583
19,583 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.0671 | $ 1.07 |
| 10+ | $ 0.8759 | $ 8.76 |
| 30+ | $ 0.7812 | $ 23.44 |
| 100+ | $ 0.6864 | $ 68.64 |
| 500+ | $ 0.5524 | $ 276.20 |
| 800+ | $ 0.523 | $ 418.40 |
Standard Packaging800/Full Reel | ||
Better price for more quantity?
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | D2PAK | |
| Output Capacitance(Coss) | 800pF | |
| Pd - Power Dissipation | 170W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 38A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 430pF | |
| RDS(on) | 60mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 2.78nF | |
| Gate Charge(Qg) | 230nC@10V | |
| Vgs | ±20V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | D2PAK | |
| Output Capacitance(Coss) | 800pF | |
| Pd - Power Dissipation | 170W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 38A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 430pF | |
| RDS(on) | 60mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 2.78nF | |
| Gate Charge(Qg) | 230nC@10V | |
| Vgs | ±20V | |
| Type | P-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications.
Features
AI Translation
- Advanced Process Technology
- Ultra Low On-Resistance
- 150°C Operating Temperature
- Fast Switching
- Repetitive Avalanche Allowed up to Tjmax
- P-Channel
- Lead-Free
C2622 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| IRF5210STRRPBF | Infineon | D2PAK | 1 | $ 2.4711 | ||
| IXTA52P10P | Littelfuse/IXYS | TO-263AA | 300 | $ 8.2711 | ||
| IXTA52P10P-TRL | Littelfuse/IXYS | TO-263AA | 10 | $ 13.8448 | ||
| IPB720P15LMATMA1-VB | VBsemi Elec | TO-263 | 5 | $2.5460 $2.68 | ||
| IPB720P15LM-VB | VBsemi Elec | TO-263 | 5 | $2.5460 $2.68 | ||
| IRF5210STRL-MNS | Minos | TO-263 | 784 | $ 0.9311 | ||
| IXTA44P15T-TRL | Littelfuse/IXYS | TO-263AA | 0 | $ 10.8931 | ||
| SP010P16GHTD | Siliup | TO-263 | 0 | $ 0.7994 | ||
| HYG190P13NA1B | HUAYI | TO-263-2 | 0 | $ 2.2594 | ||
| IXTA76P10T-TRL | Littelfuse/IXYS | TO-263(D2Pak) | 0 | $ 6.7321 |