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Infineon IRFP3415PBF
| Manufacturer | |
| MPN | IRFP3415PBF |
| LCSC Part # | C2615 |
| Packaging | TO-247AC |
| Customer # | |
| Key Attributes | MOSFET N-CH 150V 43A TO-247AC |
| Datasheet | Infineon IRFP3415PBF |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 5 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-247AC | |
| Output Capacitance(Coss) | 640pF | |
| Ciss-Input Capacitance | 2.4nF | |
| Pd - Power Dissipation | 200W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 150V | |
| Current - Continuous Drain(Id) | 43A | |
| Reverse Transfer Capacitance (Crss) | 340pF | |
| RDS(on) | 42mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 200nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-247AC | |
| Output Capacitance(Coss) | 640pF | |
| Ciss-Input Capacitance | 2.4nF | |
| Pd - Power Dissipation | 200W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 150V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 43A | |
| Reverse Transfer Capacitance (Crss) | 340pF | |
| RDS(on) | 42mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 200nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
Introduction
Fifth Generation HEXFET Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247 package is preferred for commercial industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.
Features
- Advanced Process Technology
- Dynamic dv/dt Rating
- 175°C Operating Temperature
- Fast Switching
- Fully Avalanche Rated
- Lead-Free
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.7722$ 1.4001 | $ 1.40 |
| 10+ | $ 1.6335$ 1.2905 | $ 12.91 |
| 30+ | $ 1.5453$ 1.2208 | $ 36.62 |
| 100+ | $ 1.4572$ 1.1512 | $ 115.12 |
| 500+ | $ 1.4164$ 1.1190 | $ 559.50 |
| 1,000+ | $ 1.3985$ 1.1049 | $ 1104.90 |
Standard Packaging25/Full Tube | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-247AC | |
| Output Capacitance(Coss) | 640pF | |
| Ciss-Input Capacitance | 2.4nF | |
| Pd - Power Dissipation | 200W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 150V | |
| Current - Continuous Drain(Id) | 43A | |
| Reverse Transfer Capacitance (Crss) | 340pF | |
| RDS(on) | 42mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 200nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-247AC | |
| Output Capacitance(Coss) | 640pF | |
| Ciss-Input Capacitance | 2.4nF | |
| Pd - Power Dissipation | 200W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 150V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 43A | |
| Reverse Transfer Capacitance (Crss) | 340pF | |
| RDS(on) | 42mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 200nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
Introduction
Fifth Generation HEXFET Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247 package is preferred for commercial industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.
Features
- Advanced Process Technology
- Dynamic dv/dt Rating
- 175°C Operating Temperature
- Fast Switching
- Fully Avalanche Rated
- Lead-Free
C2615 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Alternative Type | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|---|
| IRFP4232PBF-OSEN | OSEN | Similar | TO-247S | 30 | $ 2.3288 | ||
| SP50MF65TF | Siliup | Similar | TO-247 | 80 | $3.1076 $3.8845 | ||
| IRFP4568PBF-MNS | Minos | Similar | TO-247 | 483 | $ 1.4629 | ||
| IXTQ60N20T-JSM | JSMSEMI | Similar | TO-247 | 65 | $1.5673 $1.6497 | ||
| TSK50N30M | Truesemi | Similar | TO-247 | 79 | $ 2.8858 |