- Pinout
- Footprint
Infineon IRLML6402TRPBF
| Manufacturer | |
| MPN | IRLML6402TRPBF |
| LCSC Part # | C2593 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | MOSFET P-CH 20V 3.7A SOT-23 |
| Datasheet | Infineon IRLML6402TRPBF |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 11 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | SOT-23 | |
| Output Capacitance(Coss) | 145pF | |
| Pd - Power Dissipation | 1.3W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 3.7A | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 110pF | |
| RDS(on) | 65mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 633pF | |
| Gate Charge(Qg) | 12nC | |
| Vgs | ±12V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | SOT-23 | |
| Output Capacitance(Coss) | 145pF | |
| Pd - Power Dissipation | 1.3W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 3.7A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 110pF | |
| RDS(on) | 65mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 633pF | |
| Gate Charge(Qg) | 12nC | |
| Vgs | ±12V | |
| Type | P-Channel |
Introduction
These P-Channel MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management. A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1 mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMClA cards. The thermal resistance and power dissipation are the best available.
Features
- Ultra Low On-Resistance
- Fast Switching
- Low Profile (<1.1 mm)
- Available in Tape and Reel
- Lead-Free
- RoHS Compliant, Halogen-Free
Applications
- battery and load management
- portable electronics
- PCMClA cards
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.4961 | $ 0.50 |
| 10+ | $ 0.3975 | $ 3.98 |
| 30+ | $ 0.3499 | $ 10.50 |
| 100+ | $ 0.3072 | $ 30.72 |
| 500+ | $ 0.2957 | $ 147.85 |
| 1,000+ | $ 0.2875 | $ 287.50 |
Standard Packaging3000/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | SOT-23 | |
| Output Capacitance(Coss) | 145pF | |
| Pd - Power Dissipation | 1.3W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 3.7A | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 110pF | |
| RDS(on) | 65mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 633pF | |
| Gate Charge(Qg) | 12nC | |
| Vgs | ±12V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | SOT-23 | |
| Output Capacitance(Coss) | 145pF | |
| Pd - Power Dissipation | 1.3W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 3.7A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 110pF | |
| RDS(on) | 65mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 633pF | |
| Gate Charge(Qg) | 12nC | |
| Vgs | ±12V | |
| Type | P-Channel |
Introduction
These P-Channel MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management. A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1 mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMClA cards. The thermal resistance and power dissipation are the best available.
Features
- Ultra Low On-Resistance
- Fast Switching
- Low Profile (<1.1 mm)
- Available in Tape and Reel
- Lead-Free
- RoHS Compliant, Halogen-Free
Applications
- battery and load management
- portable electronics
- PCMClA cards
C2593 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| IRLML6402 | Guangdong Hottech | SOT-23 | 6,970 | $0.0589 $0.0619 | ||
| WST3401 | Winsok Semicon | SOT-23-3L | 1,820 | $ 0.0698 | ||
| KIRLML6402TRPBF | KUU | SOT-23 | 4,050 | $ 0.0546 | ||
| RU3401C | Shenzhen ruichips Semicon | SOT-23-3 | 5 | $ 0.0921 | ||
| AP2P053N | APEC | SOT-23S | 2,995 | $ 0.1059 | ||
| CCX2301BA | Chao He | SOT-23 | 15,400 | $0.0171 $0.0179 | ||
| IRLML6402 | TECH PUBLIC | SOT-23 | 4,905 | $ 0.0923 | ||
| AO3401A | FUXINSEMI | SOT-23 | 2,680 | $0.0380 $0.0422 | ||
| SP2305LT2C | Siliup | SOT-23 | 300 | $ 0.0141 | ||
| VB2240 | VBsemi Elec | SOT-23 | 100 | $0.0691 $0.0727 | ||
| IRLML6402GTRPBF | Infineon | SOT-23 | 0 | $ 0.6353 |