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Infineon IRLML5203TRPBF
| Manufacturer | |
| MPN | IRLML5203TRPBF |
| LCSC Part # | C2592 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | MOSFET P-CH 30V 3A SOT-23 |
| Datasheet | Infineon IRLML5203TRPBF |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 5 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | SOT-23 | |
| Output Capacitance(Coss) | 71pF | |
| Ciss-Input Capacitance | 510pF | |
| Pd - Power Dissipation | 1.25W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 3A | |
| Reverse Transfer Capacitance (Crss) | 43pF | |
| RDS(on) | 165mΩ@4.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 14nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | SOT-23 | |
| Output Capacitance(Coss) | 71pF | |
| Ciss-Input Capacitance | 510pF | |
| Pd - Power Dissipation | 1.25W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 3A | |
| Reverse Transfer Capacitance (Crss) | 43pF | |
| RDS(on) | 165mΩ@4.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 14nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | P-Channel |
Introduction
These P-channel MOSFETs utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3TM, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1 mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMClA cards. The thermal resistance and power dissipation are the best available.
Features
- Ultra Low On-Resistance
- Low Gate Charge
- Lead-Free
- RoHS Compliant, Halogen-Free
Applications
- battery and load management applications
- portable electronics
- PCMClA cards
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | SOT-23 | |
| Output Capacitance(Coss) | 71pF | |
| Ciss-Input Capacitance | 510pF | |
| Pd - Power Dissipation | 1.25W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 3A | |
| Reverse Transfer Capacitance (Crss) | 43pF | |
| RDS(on) | 165mΩ@4.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 14nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | SOT-23 | |
| Output Capacitance(Coss) | 71pF | |
| Ciss-Input Capacitance | 510pF | |
| Pd - Power Dissipation | 1.25W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 3A | |
| Reverse Transfer Capacitance (Crss) | 43pF | |
| RDS(on) | 165mΩ@4.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 14nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | P-Channel |
Introduction
These P-channel MOSFETs utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3TM, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1 mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMClA cards. The thermal resistance and power dissipation are the best available.
Features
- Ultra Low On-Resistance
- Low Gate Charge
- Lead-Free
- RoHS Compliant, Halogen-Free
Applications
- battery and load management applications
- portable electronics
- PCMClA cards
C2592 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |