- Pinout
- Footprint
Images for reference only
EDA ModelsEasyEDA
Infineon IRF2807PBF
| Manufacturer | |
| MPN | IRF2807PBF |
| LCSC Part # | C2560 |
| Packaging | TO-220AB |
| Customer # | |
| Key Attributes | MOSFET N-CH 75V 75A TO-220AB |
| Datasheet | Infineon IRF2807PBF |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-220AB | |
| Output Capacitance(Coss) | 610pF | |
| Pd - Power Dissipation | 230W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 75V | |
| Current - Continuous Drain(Id) | 75A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 130pF | |
| RDS(on) | 13mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.82nF | |
| Gate Charge(Qg) | 160nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-220AB | |
| Output Capacitance(Coss) | 610pF | |
| Pd - Power Dissipation | 230W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 75V | |
| Current - Continuous Drain(Id) | 75A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 130pF | |
| RDS(on) | 13mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.82nF | |
| Gate Charge(Qg) | 160nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
Specifically designed for Automotive applications, this Stripe Planar design of HEXFET Q PowerMOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
Features
AI Translation
- Advanced Planar Technology
- Low On-Resistance
- Dynamic dV/dT Rating
- 175°C Operating Temperature
- Fast Switching
- Fully Avalanche Rated
- Repetitive Avalanche Allowed up to Tjmax
- Lead-Free, RoHS Compliant
- Automotive Qualified
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
In-Stock: 8,000
8,000 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.7037 | $ 0.70 |
| 10+ | $ 0.562 | $ 5.62 |
| 50+ | $ 0.4414 | $ 22.07 |
| 100+ | $ 0.3714 | $ 37.14 |
| 500+ | $ 0.3291 | $ 164.55 |
| 1,000+ | $ 0.3063 | $ 306.30 |
Standard Packaging50/Full Tube | ||
Better price for more quantity?
$
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-220AB | |
| Output Capacitance(Coss) | 610pF | |
| Pd - Power Dissipation | 230W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 75V | |
| Current - Continuous Drain(Id) | 75A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 130pF | |
| RDS(on) | 13mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.82nF | |
| Gate Charge(Qg) | 160nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-220AB | |
| Output Capacitance(Coss) | 610pF | |
| Pd - Power Dissipation | 230W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 75V | |
| Current - Continuous Drain(Id) | 75A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 130pF | |
| RDS(on) | 13mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.82nF | |
| Gate Charge(Qg) | 160nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
Specifically designed for Automotive applications, this Stripe Planar design of HEXFET Q PowerMOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
Features
AI Translation
- Advanced Planar Technology
- Low On-Resistance
- Dynamic dV/dT Rating
- 175°C Operating Temperature
- Fast Switching
- Fully Avalanche Rated
- Repetitive Avalanche Allowed up to Tjmax
- Lead-Free, RoHS Compliant
- Automotive Qualified
C2560 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| P75NF75 | Minos | TO-220 | 2,900 | $ 0.3744 | ||
| CRST060N10N | CRMICRO | TO-220 | 720 | $ 0.7932 | ||
| STP80NF12 | ST | TO-220 | 3 | $ 1.9279 | ||
| IXTP80N12T2-VB | VBsemi Elec | TO-220AB | 23 | $0.8800 $1.0352 | ||
| NTP6410ANG-VB | VBsemi Elec | TO-220AB | 10 | $0.8800 $1.0352 | ||
| 80N10-VB | VBsemi Elec | TO-220AB | 7 | $1.0473 $1.2321 | ||
| FDP3652-VB | VBsemi Elec | TO-220AB | 2 | $0.8800 $1.0352 | ||
| AUIRF2807 | Infineon | TO-220AB | 0 | $ 1.4474 | ||
| NCEP040N12 | NCE | TO-220 | 0 | $ 2.2312 | ||
| IRFB4510PBF-VB | VBsemi Elec | TO-220AB | 0 | $1.3135 $1.3826 |