Winbond W25Q40EWUXIE TR
| Fabricante | WinbondAsian Brands |
| N.º de pieza fab. | W25Q40EWUXIE TR |
| Nº LCSC | C2456209 |
| Emb. | USON-8-EP(2x3) |
| Número de Cliente | |
| Atrib. clave | SPI Flash Memory with Dual/Quad SPI & QPI |
| Hoja de Datos | Winbond W25Q40EWUXIE TR |
| Cumplimiento RoHS | 1 documentos disponibles |
Especificaciones del Producto
| Tipo | Descripción | |
|---|---|---|
| Categoría | Integrated Circuits (ICs)/Memory/Memory | |
| Fabricante | Winbond | |
| Emb. | USON-8-EP(2x3) | |
| Operating Temperature | -40℃~+85℃ | |
| Features | - | |
| Memory Size | 4Mbit | |
| Voltage - Supply | 1.65V~1.95V | |
| Program / Erase Cycles | 100,000 cycles | |
| Clock Frequency | 104MHz | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | 180ms@(64KB) | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | - | |
| Standby Supply Current | - | |
| Interface | SPI |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Integrated Circuits (ICs)/Memory/Memory | |
| Fabricante | Winbond | |
| Emb. | USON-8-EP(2x3) | |
| Operating Temperature | -40℃~+85℃ | |
| Features | - | |
| Memory Size | 4Mbit | |
| Voltage - Supply | 1.65V~1.95V | |
| Program / Erase Cycles | 100,000 cycles |
| Tipo | Descripción | |
|---|---|---|
| Clock Frequency | 104MHz | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | 180ms@(64KB) | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | - | |
| Standby Supply Current | - | |
| Interface | SPI |
Descripción
The W25Q40EW (4M-bit) Serial Flash memory provides a storage solution for systems with limited space, pins and power. The 25Q series offers flexibility and performance well beyond ordinary Serial Flash devices. They are ideal for code shadowing to RAM, executing code directly from Dual/Quad SPI (XIP) and storing voice, text and data. The device operates on a single 1.65V to 1.95V power supply with current consumption as low as 1mA active and 1μA for power-down. All devices are offered in space-saving packages. The W25Q40EW array is organized into 2,048 programmable pages of 256-bytes each. Up to 256 bytes can be programmed at a time. Pages can be erased in groups of 16 (4KB sector erase), groups of 128 (32KB block erase), groups of 256 (64KB block erase) or the entire chip (chip erase). The W25Q40EW has 128 erasable sectors and 8 erasable blocks respectively. The small 4KB sectors allow for greater flexibility in applications that require data and parameter storage.
| Cant. | Prec. unit.(Solo como referencia) | Importo total |
|---|---|---|
| 1+ | $ 1.4278 | $ 1.43 |
| 10+ | $ 1.2385 | $ 12.39 |
| 30+ | $ 1.1422 | $ 34.27 |
| 100+ | $ 1.0492 | $ 104.92 |
| 500+ | $ 0.9931 | $ 496.55 |
| 1,000+ | $ 0.9626 | $ 962.60 |
Encapsulado Estándar4000/Full Reel | ||
Especificaciones del Producto
| Tipo | Descripción | |
|---|---|---|
| Categoría | Integrated Circuits (ICs)/Memory/Memory | |
| Fabricante | Winbond | |
| Emb. | USON-8-EP(2x3) | |
| Operating Temperature | -40℃~+85℃ | |
| Features | - | |
| Memory Size | 4Mbit | |
| Voltage - Supply | 1.65V~1.95V | |
| Program / Erase Cycles | 100,000 cycles | |
| Clock Frequency | 104MHz | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | 180ms@(64KB) | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | - | |
| Standby Supply Current | - | |
| Interface | SPI |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Integrated Circuits (ICs)/Memory/Memory | |
| Fabricante | Winbond | |
| Emb. | USON-8-EP(2x3) | |
| Operating Temperature | -40℃~+85℃ | |
| Features | - | |
| Memory Size | 4Mbit | |
| Voltage - Supply | 1.65V~1.95V | |
| Program / Erase Cycles | 100,000 cycles |
| Tipo | Descripción | |
|---|---|---|
| Clock Frequency | 104MHz | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | 180ms@(64KB) | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | - | |
| Standby Supply Current | - | |
| Interface | SPI |
Descripción
The W25Q40EW (4M-bit) Serial Flash memory provides a storage solution for systems with limited space, pins and power. The 25Q series offers flexibility and performance well beyond ordinary Serial Flash devices. They are ideal for code shadowing to RAM, executing code directly from Dual/Quad SPI (XIP) and storing voice, text and data. The device operates on a single 1.65V to 1.95V power supply with current consumption as low as 1mA active and 1μA for power-down. All devices are offered in space-saving packages. The W25Q40EW array is organized into 2,048 programmable pages of 256-bytes each. Up to 256 bytes can be programmed at a time. Pages can be erased in groups of 16 (4KB sector erase), groups of 128 (32KB block erase), groups of 256 (64KB block erase) or the entire chip (chip erase). The W25Q40EW has 128 erasable sectors and 8 erasable blocks respectively. The small 4KB sectors allow for greater flexibility in applications that require data and parameter storage.
C2456209 Biblioteca EasyEDA
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
| Tipo | Detalles |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |

