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onsemi MMBFJ176
| Manufacturer | |
| MPN | MMBFJ176 |
| LCSC Part # | C232759 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | P-Channel Switch |
| Datasheet | onsemi MMBFJ176 |
| RoHS Compliance | 4 documents available |
| Alternative Parts | 4 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/JFETs | |
| Manufacturer | onsemi | |
| Packaging | SOT-23 | |
| FET Type | P-Channel | |
| Ciss-Input Capacitance | - | |
| Pd - Power Dissipation | 225mW | |
| Drain Current (Idss) | 2mA | |
| Number | 1 P-Channel | |
| Reverse Transfer Capacitance (Crss) | - | |
| Configuration | Standalone | |
| operating temperature | -55℃~+150℃ | |
| RDS(on) | 250Ω | |
| Gate-Source Breakdown Voltage (Vgss) | 30V | |
| Output Capacitance(Coss) | - | |
| Gate-Source Cutoff Voltage (VGS(off)) | 1V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/JFETs | |
| Manufacturer | onsemi | |
| Packaging | SOT-23 | |
| FET Type | P-Channel | |
| Ciss-Input Capacitance | - | |
| Pd - Power Dissipation | 225mW | |
| Drain Current (Idss) | 2mA | |
| Number | 1 P-Channel |
| Type | Description | |
|---|---|---|
| Reverse Transfer Capacitance (Crss) | - | |
| Configuration | Standalone | |
| operating temperature | -55℃~+150℃ | |
| RDS(on) | 250Ω | |
| Gate-Source Breakdown Voltage (Vgss) | 30V | |
| Output Capacitance(Coss) | - | |
| Gate-Source Cutoff Voltage (VGS(off)) | 1V |
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Introduction
AI Translation
This device is designed for low-level analog switching sample-and-hold circuits and chopper-stabilized amplifiers. Sourced from process 88.
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/JFETs | |
| Manufacturer | onsemi | |
| Packaging | SOT-23 | |
| FET Type | P-Channel | |
| Ciss-Input Capacitance | - | |
| Pd - Power Dissipation | 225mW | |
| Drain Current (Idss) | 2mA | |
| Number | 1 P-Channel | |
| Reverse Transfer Capacitance (Crss) | - | |
| Configuration | Standalone | |
| operating temperature | -55℃~+150℃ | |
| RDS(on) | 250Ω | |
| Gate-Source Breakdown Voltage (Vgss) | 30V | |
| Output Capacitance(Coss) | - | |
| Gate-Source Cutoff Voltage (VGS(off)) | 1V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/JFETs | |
| Manufacturer | onsemi | |
| Packaging | SOT-23 | |
| FET Type | P-Channel | |
| Ciss-Input Capacitance | - | |
| Pd - Power Dissipation | 225mW | |
| Drain Current (Idss) | 2mA | |
| Number | 1 P-Channel |
| Type | Description | |
|---|---|---|
| Reverse Transfer Capacitance (Crss) | - | |
| Configuration | Standalone | |
| operating temperature | -55℃~+150℃ | |
| RDS(on) | 250Ω | |
| Gate-Source Breakdown Voltage (Vgss) | 30V | |
| Output Capacitance(Coss) | - | |
| Gate-Source Cutoff Voltage (VGS(off)) | 1V |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This device is designed for low-level analog switching sample-and-hold circuits and chopper-stabilized amplifiers. Sourced from process 88.
C232759 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |