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EDA ModelsEasyEDA
onsemi MUN5312DW1T1G
| Manufacturer | |
| MPN | MUN5312DW1T1G |
| LCSC Part # | C232568 |
| Packaging | SOT-363 |
| Customer # | |
| Key Attributes | TRANS PREBIAS 50V SOT-363 |
| Datasheet | onsemi MUN5312DW1T1G |
| RoHS Compliance | 4 documents available |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Manufacturer | onsemi | |
| Packaging | SOT-363 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 60 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Operating Temperature | -55℃~+150℃ | |
| Output Voltage(VO(on)) | 200mV | |
| Input Resistor | 22kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 187mW | |
| Voltage - Input(Max)(VI(off)) | 1.2V | |
| Input Voltage (VI(on)@Ic,Vce) | 1.9V | |
| Current - Collector(Ic) | 100mA | |
| Collector - Emitter Voltage VCEO | 50V | |
| type | NPN+PNP | |
| Number | 1 NPN Pre-Biased, 1 PNP Pre-Biased |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Manufacturer | onsemi | |
| Packaging | SOT-363 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 60 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Operating Temperature | -55℃~+150℃ | |
| Output Voltage(VO(on)) | 200mV |
| Type | Description | |
|---|---|---|
| Input Resistor | 22kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 187mW | |
| Voltage - Input(Max)(VI(off)) | 1.2V | |
| Input Voltage (VI(on)@Ic,Vce) | 1.9V | |
| Current - Collector(Ic) | 100mA | |
| Collector - Emitter Voltage VCEO | 50V | |
| type | NPN+PNP | |
| Number | 1 NPN Pre-Biased, 1 PNP Pre-Biased |
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Introduction
AI Translation
This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
Features
AI Translation
- Simplifies Circuit Design
- Reduces Board Space
- Reduces Component Count
- S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
- These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Manufacturer | onsemi | |
| Packaging | SOT-363 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 60 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Operating Temperature | -55℃~+150℃ | |
| Output Voltage(VO(on)) | 200mV | |
| Input Resistor | 22kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 187mW | |
| Voltage - Input(Max)(VI(off)) | 1.2V | |
| Input Voltage (VI(on)@Ic,Vce) | 1.9V | |
| Current - Collector(Ic) | 100mA | |
| Collector - Emitter Voltage VCEO | 50V | |
| type | NPN+PNP | |
| Number | 1 NPN Pre-Biased, 1 PNP Pre-Biased |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Manufacturer | onsemi | |
| Packaging | SOT-363 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 60 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Operating Temperature | -55℃~+150℃ | |
| Output Voltage(VO(on)) | 200mV |
| Type | Description | |
|---|---|---|
| Input Resistor | 22kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 187mW | |
| Voltage - Input(Max)(VI(off)) | 1.2V | |
| Input Voltage (VI(on)@Ic,Vce) | 1.9V | |
| Current - Collector(Ic) | 100mA | |
| Collector - Emitter Voltage VCEO | 50V | |
| type | NPN+PNP | |
| Number | 1 NPN Pre-Biased, 1 PNP Pre-Biased |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
Features
AI Translation
- Simplifies Circuit Design
- Reduces Board Space
- Reduces Component Count
- S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
- These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant
C232568 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Type | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |