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HXY MOSFET HSZESD7361XV2T1G product image
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HXY MOSFET HSZESD7361XV2T1G

Manufacturer
HXY MOSFETAsian Brands
MPN
HSZESD7361XV2T1G
LCSC Part #
C22440210
Packaging
SOD-523
Customer #
Key Attributes
ESD DIODE 5VWM 15VC SOD-523
DatasheetHXY MOSFET HSZESD7361XV2T1G
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
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Minimum: 5Multiple: 5Sales Unit: Piece
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QtyUnit Price(Reference Only)Total Amount
5+$ 0.1416$ 0.71
50+$ 0.1122$ 5.61
150+$ 0.0976$ 14.64
500+$ 0.0866$ 43.30
3,000+$ 0.0778$ 233.40
6,000+$ 0.0734$ 440.40
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryCircuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes
ManufacturerHXY MOSFET
PackagingSOD-523
Clamping Voltage15V
Operating Temperature-40℃~+125℃
Peak Pulse Current (Ipp)4A
Peak Pulse Power Dissipation (Ppp)60W@8/20us
Voltage - Breakdown6V
Number of Channels1
typeESD
PolarityUnidirectional
Reverse Leakage Current (Ir)100nA
Reverse Stand-Off Voltage (Vrwm)5V
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Introduction

AI Translation

HSZESD7361XV2T1G protects sensitive semiconductor components from damage or interference caused by electrostatic discharge and other voltage transient events. Its superior clamping capability, low leakage current, low capacitance, and fast response time provide robust protection for designs exposed to ESD environments. The device offers designers flexibility to protect a single unidirectional line in applications where an array is not suitable. Available in SOD-523 package.

Features

AI Translation
  • Transient protection for high-speed data lines, compliant with IEC 61000-4-2 (ESD) ±8kV (contact discharge) and ±15kV (air discharge), and IEC 61000-4-4 (EFT) 40A (5/50 ns)
  • Peak power dissipation: 60W (8/20μs)
  • Working voltage: 5V
  • Protects one Vcc or data line
  • Low clamping voltage
  • Low leakage current