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HUASHUO HSH8119
| Manufacturer | HUASHUOAsian Brands |
| MPN | HSH8119 |
| LCSC Part # | C22359320 |
| Packaging | TO-263 |
| Customer # | |
| Key Attributes | MOSFET P-CH 80V 90A TO-263 |
| Datasheet | HUASHUO HSH8119 |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 3 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HUASHUO | |
| Packaging | TO-263 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 80V | |
| Output Capacitance(Coss) | 390pF | |
| Current - Continuous Drain(Id) | 90A | |
| Gate Threshold Voltage (Vgs(th)) | 1.8V | |
| Pd - Power Dissipation | 210W | |
| RDS(on) | 15mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 13.3nF | |
| Gate Charge(Qg) | 190nC | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HUASHUO | |
| Packaging | TO-263 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 80V | |
| Output Capacitance(Coss) | 390pF | |
| Current - Continuous Drain(Id) | 90A | |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 210W | |
| RDS(on) | 15mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 13.3nF | |
| Gate Charge(Qg) | 190nC | |
| Type | P-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
HSH8119 is a high cell density trench P-channel MOSFET offering excellent on-resistance (R<sub>DS(ON)</sub>) and gate charge for most synchronous buck converter applications. HSH8119 complies with RoHS and green product requirements, is 100% guaranteed for avalanche ruggedness (EAS), and has passed full functional reliability qualification.
Features
AI Translation
- Ultra-low gate charge
- 100% guaranteed avalanche capability (EAS)
- Green/RoHS-compliant devices available
- Excellent CdV/dt immunity
- Advanced high cell density trench technology
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
In-Stock: 615
615 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.1554 | $ 1.16 |
| 10+ | $ 0.9604 | $ 9.60 |
| 30+ | $ 0.8539 | $ 25.62 |
| 100+ | $ 0.7326 | $ 73.26 |
| 500+ | $ 0.6146 | $ 307.30 |
| 800+ | $ 0.59 | $ 472.00 |
Standard Packaging800/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HUASHUO | |
| Packaging | TO-263 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 80V | |
| Output Capacitance(Coss) | 390pF | |
| Current - Continuous Drain(Id) | 90A | |
| Gate Threshold Voltage (Vgs(th)) | 1.8V | |
| Pd - Power Dissipation | 210W | |
| RDS(on) | 15mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 13.3nF | |
| Gate Charge(Qg) | 190nC | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HUASHUO | |
| Packaging | TO-263 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 80V | |
| Output Capacitance(Coss) | 390pF | |
| Current - Continuous Drain(Id) | 90A | |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 210W | |
| RDS(on) | 15mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 13.3nF | |
| Gate Charge(Qg) | 190nC | |
| Type | P-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
HSH8119 is a high cell density trench P-channel MOSFET offering excellent on-resistance (R<sub>DS(ON)</sub>) and gate charge for most synchronous buck converter applications. HSH8119 complies with RoHS and green product requirements, is 100% guaranteed for avalanche ruggedness (EAS), and has passed full functional reliability qualification.
Features
AI Translation
- Ultra-low gate charge
- 100% guaranteed avalanche capability (EAS)
- Green/RoHS-compliant devices available
- Excellent CdV/dt immunity
- Advanced high cell density trench technology
C22359320 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Alternative Type | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|---|
| HSH0129 | HUASHUO | Similar | TO-263 | 138 | $ 1.9998 | ||
| HSH8129 | HUASHUO | Similar | TO-263 | 13 | $ 2.0579 | ||
| HSH0195A | HUASHUO | Similar | TO-263 | 594 | $ 1.4892 |
3 more alternative parts.View all substitutes