- Pinout
- Footprint
Images for reference only
EDA ModelsEasyEDA
HUASHUO HSU5N25
| Manufacturer | HUASHUOAsian Brands |
| MPN | HSU5N25 |
| LCSC Part # | C22359255 |
| Packaging | TO-252 |
| Customer # | |
| Key Attributes | MOSFET N-CH 250V 5A TO-252 |
| Datasheet | HUASHUO HSU5N25 |
| Alternative Parts | 1 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HUASHUO | |
| Packaging | TO-252 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 250V | |
| Output Capacitance(Coss) | 670pF | |
| Current - Continuous Drain(Id) | 5A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 2.7W | |
| RDS(on) | 1.2Ω@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 8pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 670pF | |
| Gate Charge(Qg) | 12.5nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HUASHUO | |
| Packaging | TO-252 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 250V | |
| Output Capacitance(Coss) | 670pF | |
| Current - Continuous Drain(Id) | 5A | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 2.7W | |
| RDS(on) | 1.2Ω@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 8pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 670pF | |
| Gate Charge(Qg) | 12.5nC@10V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
The HSU5N25 is a high-performance trench N-channel MOSFET with ultra-high cell density, delivering excellent on-resistance (R<sub>DS(ON)</sub>) and gate charge for most synchronous buck converter applications. The HSU5N25 is RoHS and green product compliant, 100% guaranteed avalanche-rated (EAS), and fully qualified through comprehensive reliability certification.
Features
AI Translation
- Ultra-low gate charge
- Green/RoHS-compliant devices available
- Excellent Cdv/dt immunity
- Advanced high-cell-density trench technology
In-Stock: 2,500
2,500 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.2622 | $ 1.31 |
| 50+ | $ 0.2078 | $ 10.39 |
| 150+ | $ 0.1845 | $ 27.68 |
| 500+ | $ 0.1555 | $ 77.75 |
| 2,500+ | $ 0.1426 | $ 356.50 |
| 5,000+ | $ 0.1348 | $ 674.00 |
Standard Packaging2500/Full Reel | ||
Better price for more quantity?
$
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HUASHUO | |
| Packaging | TO-252 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 250V | |
| Output Capacitance(Coss) | 670pF | |
| Current - Continuous Drain(Id) | 5A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 2.7W | |
| RDS(on) | 1.2Ω@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 8pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 670pF | |
| Gate Charge(Qg) | 12.5nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HUASHUO | |
| Packaging | TO-252 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 250V | |
| Output Capacitance(Coss) | 670pF | |
| Current - Continuous Drain(Id) | 5A | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 2.7W | |
| RDS(on) | 1.2Ω@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 8pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 670pF | |
| Gate Charge(Qg) | 12.5nC@10V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
The HSU5N25 is a high-performance trench N-channel MOSFET with ultra-high cell density, delivering excellent on-resistance (R<sub>DS(ON)</sub>) and gate charge for most synchronous buck converter applications. The HSU5N25 is RoHS and green product compliant, 100% guaranteed avalanche-rated (EAS), and fully qualified through comprehensive reliability certification.
Features
AI Translation
- Ultra-low gate charge
- Green/RoHS-compliant devices available
- Excellent Cdv/dt immunity
- Advanced high-cell-density trench technology
C22359255 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| HSU16N25 | HUASHUO | TO-252-2 | 1,158 | $ 0.3315 |