- Pinout
- Footprint
Images for reference only
EDA ModelsEasyEDA
HUASHUO HSBA3119
| Manufacturer | HUASHUOAsian Brands |
| MPN | HSBA3119 |
| LCSC Part # | C22359241 |
| Packaging | PRPAK5x6-8L |
| Customer # | |
| Key Attributes | MOSFET P-CH 30V 130A PRPAK5x6-8L |
| Datasheet | HUASHUO HSBA3119 |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 1 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HUASHUO | |
| Packaging | PRPAK5x6-8L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 130A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 110W | |
| RDS(on) | 3.6mΩ@4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.21nF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 12.7nF | |
| Gate Charge(Qg) | 210nC@10V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HUASHUO | |
| Packaging | PRPAK5x6-8L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 130A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 110W | |
| RDS(on) | 3.6mΩ@4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.21nF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 12.7nF | |
| Gate Charge(Qg) | 210nC@10V | |
| Type | P-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
HSBA3119 is a high cell density trench P-channel MOSFET offering excellent on-resistance (R<sub>DS(ON)</sub>) and gate charge for most synchronous buck converter applications. HSBA3119 complies with RoHS and green product requirements, is 100% guaranteed avalanche-rated (EAS), and has passed full function reliability qualification.
Features
AI Translation
- Ultra-low gate charge
- 100% guaranteed avalanche energy rated (EAS)
- Green/eco-friendly devices available
- Excellent CdV/dt immunity
- Advanced high cell density trench technology
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
In-Stock: 812
812 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.8232 | $ 0.82 |
| 10+ | $ 0.6828 | $ 6.83 |
| 30+ | $ 0.6125 | $ 18.38 |
| 100+ | $ 0.5423 | $ 54.23 |
| 500+ | $ 0.49 | $ 245.00 |
| 1,000+ | $ 0.4688 | $ 468.80 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
$
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HUASHUO | |
| Packaging | PRPAK5x6-8L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 130A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 110W | |
| RDS(on) | 3.6mΩ@4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.21nF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 12.7nF | |
| Gate Charge(Qg) | 210nC@10V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HUASHUO | |
| Packaging | PRPAK5x6-8L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 130A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 110W | |
| RDS(on) | 3.6mΩ@4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.21nF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 12.7nF | |
| Gate Charge(Qg) | 210nC@10V | |
| Type | P-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
HSBA3119 is a high cell density trench P-channel MOSFET offering excellent on-resistance (R<sub>DS(ON)</sub>) and gate charge for most synchronous buck converter applications. HSBA3119 complies with RoHS and green product requirements, is 100% guaranteed avalanche-rated (EAS), and has passed full function reliability qualification.
Features
AI Translation
- Ultra-low gate charge
- 100% guaranteed avalanche energy rated (EAS)
- Green/eco-friendly devices available
- Excellent CdV/dt immunity
- Advanced high cell density trench technology
C22359241 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| HSBA4119 | HUASHUO | PRPAK5x6-8L | 2,836 | $ 0.9259 |