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HUASHUO HSL3P20

Manufacturer
HUASHUOAsian Brands
MPN
HSL3P20
LCSC Part #
C22359225
Packaging
SOT-223
Customer #
Key Attributes
MOSFET P-CH 200V 3A SOT-223
DatasheetHUASHUO HSL3P20
RoHS Compliance1 documents available
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHUASHUO
PackagingSOT-223
Operating Temperature-55℃~+150℃
Drain to Source Voltage200V
Current - Continuous Drain(Id)3A
Ciss-Input Capacitance500pF
Pd - Power Dissipation1.5W
Reverse Transfer Capacitance (Crss)20pF
RDS(on)2.4Ω@10V
Number1 P-Channel
Gate Charge(Qg)8.5nC@4.5V
Gate Threshold Voltage (Vgs(th))4V
TypeP-Channel
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Introduction

AI Translation

HSL3P20 is a high cell density trench P-channel MOSFET, offering excellent on-resistance (R<sub>DS(ON)</sub>) and efficiency for most low-power switching and load switch applications. The HSL3P20 is RoHS compliant and meets green product requirements, and has passed full-function reliability qualification.

Features

AI Translation
  • Ultra-low gate charge
  • Excellent Cdv/dt immunity
  • Green/RoHS-compliant devices available
  • Advanced high cell density trench technology