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Modelos EDAEasyEDA
VBsemi Elec AOTF20N60-VB
| Fabricante | VBsemi ElecAsian Brands |
| N.º de pieza fab. | AOTF20N60-VB |
| Nº LCSC | C22357077 |
| Emb. | TO-220F |
| Número de Cliente | |
| Atrib. clave | MOSFET N-CH 600V 12A TO-220F |
| Hoja de Datos | VBsemi Elec AOTF20N60-VB |
| Piezas alternativas | 10 |
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | VBsemi Elec | |
| Emb. | TO-220F | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Output Capacitance(Coss) | 80pF | |
| Current - Continuous Drain(Id) | 12A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Pd - Power Dissipation | 200W | |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF | |
| RDS(on) | 330mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.35nF | |
| Gate Charge(Qg) | 213nC@10V | |
| Type | N-Channel |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | VBsemi Elec | |
| Emb. | TO-220F | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Output Capacitance(Coss) | 80pF | |
| Current - Continuous Drain(Id) | 12A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Tipo | Descripción | |
|---|---|---|
| Pd - Power Dissipation | 200W | |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF | |
| RDS(on) | 330mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.35nF | |
| Gate Charge(Qg) | 213nC@10V | |
| Type | N-Channel |
Ayuda y comentariosMostrar productos similares (0) >
Características
Traducción por IA
- Low figure-of-merit (FOM) R_on×Q_g
- Low input capacitance (C_iss)
- Reduced switching and conduction losses
- Ultra low gate charge (Q_g)
- Avalanche energy rated (UIS)
Aplicaciones
Traducción por IA
- Server and telecom power supplies
- Switch mode power supplies (SMPS)
- Power factor correction power supplies (PFC)
- Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting
- Industrial
En stock: 1
1 En stock, envío inmediato
Mínimo: 1Múltiplo: 1Unidad de venta: Piece
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| Cant. | Prec. unit. | Importo total |
|---|---|---|
| 1+ | $ 1.4004$ 1.1904 | $ 1.19 |
| 10+ | $ 1.1591$ 0.9853 | $ 9.85 |
| 50+ | $ 1.0257$ 0.8719 | $ 43.60 |
| 100+ | $ 0.8749$ 0.7437 | $ 74.37 |
| 500+ | $ 0.8082$ 0.6870 | $ 343.50 |
| 1,000+ | $ 0.778$ 0.6613 | $ 661.30 |
Encapsulado Estándar50/Full Tube | ||
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Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | VBsemi Elec | |
| Emb. | TO-220F | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Output Capacitance(Coss) | 80pF | |
| Current - Continuous Drain(Id) | 12A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Pd - Power Dissipation | 200W | |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF | |
| RDS(on) | 330mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.35nF | |
| Gate Charge(Qg) | 213nC@10V | |
| Type | N-Channel |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | VBsemi Elec | |
| Emb. | TO-220F | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Output Capacitance(Coss) | 80pF | |
| Current - Continuous Drain(Id) | 12A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Tipo | Descripción | |
|---|---|---|
| Pd - Power Dissipation | 200W | |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF | |
| RDS(on) | 330mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.35nF | |
| Gate Charge(Qg) | 213nC@10V | |
| Type | N-Channel |
Ayuda y comentariosMostrar productos similares (0) >
Características
Traducción por IA
- Low figure-of-merit (FOM) R_on×Q_g
- Low input capacitance (C_iss)
- Reduced switching and conduction losses
- Ultra low gate charge (Q_g)
- Avalanche energy rated (UIS)
Aplicaciones
Traducción por IA
- Server and telecom power supplies
- Switch mode power supplies (SMPS)
- Power factor correction power supplies (PFC)
- Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting
- Industrial
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Detalles |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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|---|---|---|---|---|---|---|
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| VBMB165R32S | VBsemi Elec | TO-220F | 5 | $3.3456 $3.9359 | ||
| TK090A65Z-VB | VBsemi Elec | TO-220F | 2 | $3.3456 $3.9359 | ||
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