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GeneSiC Semiconductor MUR40040CTR
| Manufacturer | |
| MPN | MUR40040CTR |
| LCSC Part # | C21563080 |
| Packaging | - |
| Customer # | |
| Key Attributes | 1 Pair Common Anode 400A 400V 1.3V@200A Diode Arrays RoHS |
| Datasheet | GeneSiC Semiconductor MUR40040CTR |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Diode Arrays | |
| Manufacturer | GeneSiC Semiconductor | |
| Packaging | - | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Diode Configuration | 1 Pair Common Anode | |
| Current - Rectified | 400A | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Reverse Recovery Time (trr) | - | |
| Voltage - DC Reverse(Vr) | 400V | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 1.3V@200A | |
| Reverse Leakage Current (Ir) | 25uA |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Diode Arrays | |
| Manufacturer | GeneSiC Semiconductor | |
| Packaging | - | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Diode Configuration | 1 Pair Common Anode | |
| Current - Rectified | 400A |
| Type | Description | |
|---|---|---|
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Reverse Recovery Time (trr) | - | |
| Voltage - DC Reverse(Vr) | 400V | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 1.3V@200A | |
| Reverse Leakage Current (Ir) | 25uA |
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Features
AI Translation
- High surge capability
- Types from 400V to 600V VRRM
- Non-ESD sensitive
- Twin Tower package
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 127.0316 | $ 127.03 |
| 200+ | $ 50.6875 | $ 10137.50 |
| 480+ | $ 48.9932 | $ 23516.74 |
| 1,000+ | $ 48.1559 | $ 48155.90 |
Standard Packaging40/Full Bag | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Diode Arrays | |
| Manufacturer | GeneSiC Semiconductor | |
| Packaging | - | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Diode Configuration | 1 Pair Common Anode | |
| Current - Rectified | 400A | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Reverse Recovery Time (trr) | - | |
| Voltage - DC Reverse(Vr) | 400V | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 1.3V@200A | |
| Reverse Leakage Current (Ir) | 25uA |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Diode Arrays | |
| Manufacturer | GeneSiC Semiconductor | |
| Packaging | - | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Diode Configuration | 1 Pair Common Anode | |
| Current - Rectified | 400A |
| Type | Description | |
|---|---|---|
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Reverse Recovery Time (trr) | - | |
| Voltage - DC Reverse(Vr) | 400V | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 1.3V@200A | |
| Reverse Leakage Current (Ir) | 25uA |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- High surge capability
- Types from 400V to 600V VRRM
- Non-ESD sensitive
- Twin Tower package
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Type | Details |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |