Infineon/CYPRESS CY7C1019CV33-10CT

The CY7C1019CV33 is a high performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and tristate drivers. This device has an automatic power down feature that significantly reduces power consumption when deselected. Writing to the device is accomplished by taking Chip Enable (CE (overline)) and Write Enable (WE) inputs LOW. Data on the eight I/O pins (I/O₀ through I/O₇) is then written into the location specified on the address pins A₀ through A₁₆. Reading from the device is accomplished by taking Chip Enable (CE (overline)) and Output Enable (OE) LOW while forcing Write Enable (WE) HIGH. Under these conditions, the contents of the memory location specified by the address pins will appear on the I/O pins. The eight input/output pins (I/O₀ through I/O₇) are placed in a high impedance state when the device is deselected (CE HIGH), the outputs are disabled (OE (overline) HIGH), or during a write operation (CE LOW, and WE LOW).

• Temperature Ranges ❐Industrial: -40℃ to 85℃ ❐Automotive-A: -40℃ to 85℃
• Pin and Function compatible with CY7C1019BV33
• High Speed □tan = 10 ns
• CMOS for optimum Speed and Power
• Data Retention at 2.0V
• Center Power/Ground Pinout
• Automatic Power Down when deselected
• Easy Memory Expansion with CE and OE Options
• Available in Pb-free and non Pb-free 48-Ball VFBGA, 32-Pin TSOP II and 400-mil SOJ Package