Alliance Memory AS7C4096A-12TCNTR

The AS7C4096A is a high-performance CMOS 4,194,304-bit Static Random Access Memory (SRAM) device organized as 524,288 words x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and cycle times (tAA,tRC,tWC) of 10/12/15/20 ns with output enable access times (ΔtoE) of 5/6 ns are ideal for high-performance applications. The chip enable input CE permits easy memory expansion with multiple-bank memory systems. When CE is high the device enters standby mode. The device is guaranteed not to exceed 55mW power consumption in CMOS standby mode. A write cycle is accomplished by asserting write enable (WE) and chip enable (CE). Data on the input pins I/O1 - I/O8 is written on the rising edge of WE (write cycle 1) or CE (write cycle 2). To avoid bus contention, external devices should drive I/O pins only after outputs have been disabled with output enable (OE) or write enable (WE). A read cycle is accomplished by asserting output enable (OE) and chip enable (CE), with write enable (WE) high. The chip drives I/O pins with the data word referenced by the input address. When either chip enable or output enable is inactive, or write enable is active, output drivers stay in high-impedance mode. All chip inputs and outputs are TTL-compatible, and operation is from a single 5.0V supply voltage. This device is available as per industry standard 400-mil 36-pin SOJ and 44-pin TSOP 2 packages.

• Pin compatible to AS7C4096
• Industrial and commercial temperature
• Organization: 524,288 words x 8 bits
• Center power and ground pins
• High speed - 10/12/15/20 ns address access time - 5/6 ns output enable access time
• Low power consumption: ACTIVE - 880mW/max @ 10 ns
• Low power consumption: STANDBY - 55mW/max CMOS
• Equal access and cycle times
• Easy memory expansion with CE, OE inputs
• TTL-compatible, three-state I/O
• JEDEC standard packages - 400 mil 36-pin SOJ - 44-pin TSOP 2
• ESD protection ≥2000 volts
• Latch-up current ≥200 mA