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JSMSEMI IXTK110N20L2-JSM product image
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JSMSEMI IXTK110N20L2-JSM

Manufacturer
JSMSEMIAsian Brands
MPN
IXTK110N20L2-JSM
LCSC Part #
C20616611
Packaging
TO-264
Customer #
Key Attributes
200V 110A 900W 25mΩ@10V 1 N-channel TO-264 Single FETs, MOSFETs RoHS
DatasheetJSMSEMI IXTK110N20L2-JSM
RoHS Compliance6 documents available
Alternative Parts4
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerJSMSEMI
PackagingTO-264
Operating Temperature-55℃~+150℃
Drain to Source Voltage200V
Output Capacitance(Coss)893pF
Current - Continuous Drain(Id)110A
Ciss-Input Capacitance5.784nF
Pd - Power Dissipation900W
Reverse Transfer Capacitance (Crss)561pF
RDS(on)25mΩ@10V
Number1 N-channel
Gate Charge(Qg)367nC@10V
Gate Threshold Voltage (Vgs(th))4V
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Introduction

AI Translation

The HCJU30P10 utilizes advanced trench technology to achieve excellent RDS(ON), low gate charge, and operation at gate voltages as low as 4.5V. This device is suitable for battery protection or other switching applications.

Features

AI Translation
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability

Applications

AI Translation
  • Switching Mode Power Supply (SMPS)
  • Uninterruptible Power Supply (UPS)
  • Power Factor Correction (PFC)