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micron MT48H4M32LFB5-6 IT:K
| Manufacturer | |
| MPN | MT48H4M32LFB5-6 IT:K |
| LCSC Part # | C20455128 |
| Packaging | 90-VFBGA (8x13) |
| Customer # | |
| Key Attributes | 128Mbit 166MHz 90-VFBGA (8x13) Memory RoHS |
| Datasheet | micron MT48H4M32LFB5-6 IT:K |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | micron | |
| Packaging | 90-VFBGA (8x13) | |
| Operating Temperature | -40℃~+85℃ | |
| Refresh Current | 200uA | |
| Features | High-speed clock synchronization;Auto precharge;Automatic column address generation;Auto refresh | |
| Memory Size | 128Mbit | |
| Voltage - Supply | 1.7V~1.95V;70mA | |
| Clock Frequency | 166MHz |
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | micron | |
| Packaging | 90-VFBGA (8x13) | |
| Operating Temperature | -40℃~+85℃ | |
| Refresh Current | 200uA |
| Type | Description | |
|---|---|---|
| Features | High-speed clock synchronization;Auto precharge;Automatic column address generation;Auto refresh | |
| Memory Size | 128Mbit | |
| Voltage - Supply | 1.7V~1.95V;70mA | |
| Clock Frequency | 166MHz |
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Introduction
AI Translation
128Mb Mobile Low Power Synchronous Dynamic Random Access Memory (LPSDR) is a high-speed CMOS DRAM containing 134,217,728 bits.
Features
AI Translation
- VDD / VDDQ = 1.7 - 1.95V
- Fully synchronous; all signals registered on the positive edge of the system clock
- Internal pipelined operation; column address can be changed every clock cycle
- 4 internal banks for concurrent operation
- Programmable burst length (BL): 1, 2, 4, 8, and full page
- Auto precharge, including concurrent auto precharge
- Auto refresh and self-refresh modes
- LVTTL-compatible inputs and outputs
- On-chip temperature sensor for self-refresh rate control
- Partial array self-refresh (PASR)
- Deep power down (DPD)
- Selectable output drive strength (DS)
- 64ms refresh period
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 11.9518 | $ 11.95 |
| 200+ | $ 4.7692 | $ 953.84 |
| 500+ | $ 4.6097 | $ 2304.85 |
| 1,000+ | $ 4.5307 | $ 4530.70 |
Standard Packaging1000/Full Bag | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | micron | |
| Packaging | 90-VFBGA (8x13) | |
| Operating Temperature | -40℃~+85℃ | |
| Refresh Current | 200uA | |
| Features | High-speed clock synchronization;Auto precharge;Automatic column address generation;Auto refresh | |
| Memory Size | 128Mbit | |
| Voltage - Supply | 1.7V~1.95V;70mA | |
| Clock Frequency | 166MHz |
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | micron | |
| Packaging | 90-VFBGA (8x13) | |
| Operating Temperature | -40℃~+85℃ | |
| Refresh Current | 200uA |
| Type | Description | |
|---|---|---|
| Features | High-speed clock synchronization;Auto precharge;Automatic column address generation;Auto refresh | |
| Memory Size | 128Mbit | |
| Voltage - Supply | 1.7V~1.95V;70mA | |
| Clock Frequency | 166MHz |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
128Mb Mobile Low Power Synchronous Dynamic Random Access Memory (LPSDR) is a high-speed CMOS DRAM containing 134,217,728 bits.
Features
AI Translation
- VDD / VDDQ = 1.7 - 1.95V
- Fully synchronous; all signals registered on the positive edge of the system clock
- Internal pipelined operation; column address can be changed every clock cycle
- 4 internal banks for concurrent operation
- Programmable burst length (BL): 1, 2, 4, 8, and full page
- Auto precharge, including concurrent auto precharge
- Auto refresh and self-refresh modes
- LVTTL-compatible inputs and outputs
- On-chip temperature sensor for self-refresh rate control
- Partial array self-refresh (PASR)
- Deep power down (DPD)
- Selectable output drive strength (DS)
- 64ms refresh period
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| Type | Details |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
Alternative Parts
| MPN | Manufacturer | Alternative Type | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|---|
| AS4C4M32MSA-6BIN | Alliance Memory | Similar | FBGA-90(8x13) | 0 | $ 14.1172 | ||
| AS4C4M32MSA-6BINTR | Alliance Memory | Similar | FBGA-90(8x13) | 0 | $ 5.4657 | ||
| IS42VM32400H-6BLI | ISSI | Similar | TFBGA-90(8x13) | 0 | $ 5.7016 | ||
| IS42VM32400H-6BLI-TR | ISSI | Similar | TFBGA-90(8x13) | 0 | $ 5.0783 | ||
| IS42VM32400H-75BLI | ISSI | Similar | TFBGA-90(8x13) | 0 | $ 4.9174 |
5 more alternative parts.View all substitutes