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VISHAY SISS5623DN-T1-GE3

Manufacturer
MPN
SISS5623DN-T1-GE3
LCSC Part #
C20346159
Packaging
PowerPAK1212-8S
Customer #
Key Attributes
MOSFET P-CH 60V 36.3A PowerPAK1212-8S
DatasheetVISHAY SISS5623DN-T1-GE3
RoHS Compliance2 documents available
Alternative Parts5
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerVISHAY
PackagingPowerPAK1212-8S
Output Capacitance(Coss)800pF
Ciss-Input Capacitance1.575nF
Pd - Power Dissipation56.8W
Configuration-
Operating Temperature-55℃~+150℃
Drain to Source Voltage60V
Current - Continuous Drain(Id)36.3A
Reverse Transfer Capacitance (Crss)36pF
RDS(on)46mΩ@4.5V
Number1 P-Channel
Gate Charge(Qg)33nC@10V
Vgs±20V
Gate Threshold Voltage (Vgs(th))2.6V
TypeP-Channel

Features

AI Translation
  • New generation p-channel power MOSFET
  • 100 % Rg and UIS tested
  • Ultra low RDS×Qg FOM product

Applications

AI Translation
  • Battery management
  • Load switch
  • Motor drive control