VISHAY SIS9634LDN-T1-GE3
| Manufacturer | |
| MPN | SIS9634LDN-T1-GE3 |
| LCSC Part # | C20346151 |
| Packaging | - |
| Customer # | |
| Key Attributes | 6A 17.9W 44.8mΩ@4.5V 3V FET, MOSFET Arrays RoHS |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | VISHAY | |
| Packaging | - | |
| Current - Continuous Drain(Id) | 6A | |
| Pd - Power Dissipation | 17.9W | |
| RDS(on) | 44.8mΩ@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Drain to Source Voltage | 60V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF | |
| Input Capacitance(Ciss) | 420pF | |
| Gate Charge(Qg) | 11nC@10V | |
| Output Capacitance(Coss) | 92pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | VISHAY | |
| Packaging | - | |
| Current - Continuous Drain(Id) | 6A | |
| Pd - Power Dissipation | 17.9W | |
| RDS(on) | 44.8mΩ@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Type | Description | |
|---|---|---|
| Drain to Source Voltage | 60V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF | |
| Input Capacitance(Ciss) | 420pF | |
| Gate Charge(Qg) | 11nC@10V | |
| Output Capacitance(Coss) | 92pF |
Report an ErrorShow similar products (0) >
Features
AI Translation
- 4th Generation Trench FET (TrenchFET Gen IV) power MOSFET
- Fully lead-free (Pb-free) device
- Optimized Qg, Qgd, and Qgd/Qgs ratio for reduced switching-related power losses
- 100% Rg and UIS tested
Applications
AI Translation
- Synchronous rectification
- Load switch
- Motor drive control
- Battery management
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 1.4445 | $ 1.44 |
| 200+ | $ 0.5762 | $ 115.24 |
| 500+ | $ 0.5572 | $ 278.60 |
| 1,000+ | $ 0.5477 | $ 547.70 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | VISHAY | |
| Packaging | - | |
| Current - Continuous Drain(Id) | 6A | |
| Pd - Power Dissipation | 17.9W | |
| RDS(on) | 44.8mΩ@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Drain to Source Voltage | 60V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF | |
| Input Capacitance(Ciss) | 420pF | |
| Gate Charge(Qg) | 11nC@10V | |
| Output Capacitance(Coss) | 92pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | VISHAY | |
| Packaging | - | |
| Current - Continuous Drain(Id) | 6A | |
| Pd - Power Dissipation | 17.9W | |
| RDS(on) | 44.8mΩ@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Type | Description | |
|---|---|---|
| Drain to Source Voltage | 60V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF | |
| Input Capacitance(Ciss) | 420pF | |
| Gate Charge(Qg) | 11nC@10V | |
| Output Capacitance(Coss) | 92pF |
Report an ErrorShow similar products (0) >
Features
AI Translation
- 4th Generation Trench FET (TrenchFET Gen IV) power MOSFET
- Fully lead-free (Pb-free) device
- Optimized Qg, Qgd, and Qgd/Qgs ratio for reduced switching-related power losses
- 100% Rg and UIS tested
Applications
AI Translation
- Synchronous rectification
- Load switch
- Motor drive control
- Battery management
C20346151 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

