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MICROCHIP JAN1N5802URS/TR product image
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MICROCHIP JAN1N5802URS/TR

Manufacturer
MPN
JAN1N5802URS/TR
LCSC Part #
C20291845
Packaging
-
Customer #
Key Attributes
50V 975mV@2.5A 2.5A Single Diodes
DatasheetMICROCHIP JAN1N5802URS/TR
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QtyUnit Price(Reference Only)Total Amount
1+$ 45.2233$ 45.22
200+$ 18.0453$ 3609.06
500+$ 17.4423$ 8721.15
1,000+$ 17.1446$ 17144.60
Standard Packaging100/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Diodes/Rectifiers/Single Diodes
ManufacturerMICROCHIP
Packaging-
Reverse Recovery Time (trr)-
Diode Configuration-
Voltage - DC Reverse (Vr) (Max)50V
Operating Junction Temperature Range-65℃~+175℃
Pd - Power Dissipation-
Voltage - Forward(Vf@If)975mV@2.5A
Reverse Leakage Current (Ir)1uA
Current - Rectified2.5A
Non-Repetitive Peak Forward Surge Current-

Introduction

AI Translation

This series of "ultra-fast recovery" rectifier diodes meets industry standards and is ideal for high-reliability applications where failure is not an option. These industry-recognized 2.5-ampere rated rectifiers operate at peak reverse voltages from 50 to 150 volts, hermetically sealed in a void-free glass construction with internal "Class 1" metallurgical bonding. The devices are available in both surface-mount MELF and leaded package configurations. Microsemi also offers a wide range of additional rectifier products to accommodate various current ratings and recovery time requirements, including standard, fast, and ultra-fast device types in through-hole and SMT packages.

Features

AI Translation
  • Surface mount equivalents of JEDEC registered 1N5802, 1N5804, 1N5806 series.
  • Void-free hermetic glass package.
  • Quadruple passivation.
  • Extremely rugged construction.
  • Internal "Class 1" metallurgical bonds.
  • JAN, JANTX, JANTXV, and JANS certifications available per MIL-PRF-19500/477.
  • RoHS compliant versions available (commercial grade only).

Applications

AI Translation
  • 2.5A ultra-fast recovery rectifier series, 50 to 150V.
  • High-reliability applications.
  • Switching power supplies or other applications requiring extremely fast switching speed and low forward loss.
  • High forward surge current capability.
  • Low thermal resistance.
  • Controlled avalanche with peak reverse power capability.
  • Inherent radiation hardness as described in Microsemi MicroNote 050.