MICROCHIP JAN1N5802URS/TR
| Manufacturer | |
| MPN | JAN1N5802URS/TR |
| LCSC Part # | C20291845 |
| Packaging | - |
| Customer # | |
| Key Attributes | 50V 975mV@2.5A 2.5A Single Diodes |
| Datasheet | MICROCHIP JAN1N5802URS/TR |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | MICROCHIP | |
| Packaging | - | |
| Reverse Recovery Time (trr) | - | |
| Diode Configuration | - | |
| Voltage - DC Reverse (Vr) (Max) | 50V | |
| Operating Junction Temperature Range | -65℃~+175℃ | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 975mV@2.5A | |
| Reverse Leakage Current (Ir) | 1uA | |
| Current - Rectified | 2.5A | |
| Non-Repetitive Peak Forward Surge Current | - |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | MICROCHIP | |
| Packaging | - | |
| Reverse Recovery Time (trr) | - | |
| Diode Configuration | - | |
| Voltage - DC Reverse (Vr) (Max) | 50V |
| Type | Description | |
|---|---|---|
| Operating Junction Temperature Range | -65℃~+175℃ | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 975mV@2.5A | |
| Reverse Leakage Current (Ir) | 1uA | |
| Current - Rectified | 2.5A | |
| Non-Repetitive Peak Forward Surge Current | - |
Introduction
This series of "ultra-fast recovery" rectifier diodes meets industry standards and is ideal for high-reliability applications where failure is not an option. These industry-recognized 2.5-ampere rated rectifiers operate at peak reverse voltages from 50 to 150 volts, hermetically sealed in a void-free glass construction with internal "Class 1" metallurgical bonding. The devices are available in both surface-mount MELF and leaded package configurations. Microsemi also offers a wide range of additional rectifier products to accommodate various current ratings and recovery time requirements, including standard, fast, and ultra-fast device types in through-hole and SMT packages.
Features
- Surface mount equivalents of JEDEC registered 1N5802, 1N5804, 1N5806 series.
- Void-free hermetic glass package.
- Quadruple passivation.
- Extremely rugged construction.
- Internal "Class 1" metallurgical bonds.
- JAN, JANTX, JANTXV, and JANS certifications available per MIL-PRF-19500/477.
- RoHS compliant versions available (commercial grade only).
Applications
- 2.5A ultra-fast recovery rectifier series, 50 to 150V.
- High-reliability applications.
- Switching power supplies or other applications requiring extremely fast switching speed and low forward loss.
- High forward surge current capability.
- Low thermal resistance.
- Controlled avalanche with peak reverse power capability.
- Inherent radiation hardness as described in Microsemi MicroNote 050.
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 45.2233 | $ 45.22 |
| 200+ | $ 18.0453 | $ 3609.06 |
| 500+ | $ 17.4423 | $ 8721.15 |
| 1,000+ | $ 17.1446 | $ 17144.60 |
Standard Packaging100/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | MICROCHIP | |
| Packaging | - | |
| Reverse Recovery Time (trr) | - | |
| Diode Configuration | - | |
| Voltage - DC Reverse (Vr) (Max) | 50V | |
| Operating Junction Temperature Range | -65℃~+175℃ | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 975mV@2.5A | |
| Reverse Leakage Current (Ir) | 1uA | |
| Current - Rectified | 2.5A | |
| Non-Repetitive Peak Forward Surge Current | - |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | MICROCHIP | |
| Packaging | - | |
| Reverse Recovery Time (trr) | - | |
| Diode Configuration | - | |
| Voltage - DC Reverse (Vr) (Max) | 50V |
| Type | Description | |
|---|---|---|
| Operating Junction Temperature Range | -65℃~+175℃ | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 975mV@2.5A | |
| Reverse Leakage Current (Ir) | 1uA | |
| Current - Rectified | 2.5A | |
| Non-Repetitive Peak Forward Surge Current | - |
Introduction
This series of "ultra-fast recovery" rectifier diodes meets industry standards and is ideal for high-reliability applications where failure is not an option. These industry-recognized 2.5-ampere rated rectifiers operate at peak reverse voltages from 50 to 150 volts, hermetically sealed in a void-free glass construction with internal "Class 1" metallurgical bonding. The devices are available in both surface-mount MELF and leaded package configurations. Microsemi also offers a wide range of additional rectifier products to accommodate various current ratings and recovery time requirements, including standard, fast, and ultra-fast device types in through-hole and SMT packages.
Features
- Surface mount equivalents of JEDEC registered 1N5802, 1N5804, 1N5806 series.
- Void-free hermetic glass package.
- Quadruple passivation.
- Extremely rugged construction.
- Internal "Class 1" metallurgical bonds.
- JAN, JANTX, JANTXV, and JANS certifications available per MIL-PRF-19500/477.
- RoHS compliant versions available (commercial grade only).
Applications
- 2.5A ultra-fast recovery rectifier series, 50 to 150V.
- High-reliability applications.
- Switching power supplies or other applications requiring extremely fast switching speed and low forward loss.
- High forward surge current capability.
- Low thermal resistance.
- Controlled avalanche with peak reverse power capability.
- Inherent radiation hardness as described in Microsemi MicroNote 050.
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Type | Details |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |

