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Nexperia PBSS5160T-QR

Manufacturer
Nexperia
MPN
PBSS5160T-QR
LCSC Part #
C20235728
Packaging
TO-236AB
Customer #
Key Attributes
TRANS PNP 60V 1A TO-236AB
DatasheetNexperia PBSS5160T-QR
RoHS Compliance2 documents available
Alternative Parts5
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors
ManufacturerNexperia
PackagingTO-236AB
Current - Collector Cutoff50uA
Operating Temperature-65℃~+150℃
Transition frequency(fT)220MHz
Collector - Emitter Voltage VCEO60V
DC Current Gain350
Emitter-Base Voltage VEBO5V
Current - Collector(Ic)1A
Pd - Power Dissipation400mW
ConfigurationStandalone
Number1 PNP
typePNP
Vce Saturation(VCE(sat))330mV
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Introduction

AI Translation

PNP low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4160T

Features

AI Translation
  • Low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High efficiency due to less heat generation
  • Reduces Printed-Circuit Board (PCB) area required
  • Cost-effective replacement for medium power transistors BCP52 and BCX52
  • AEC-Q101 qualified

Applications

AI Translation
  • Major application segments: Automotive Telecom infrastructure Industrial
  • Power management: JDC-to-DC conversion Supply line switching
  • Peripheral driver: Driver in low supply voltage applications (e.g. lamps and LEDs) Inductive load drivers (e.g. relays, buzzers and motors)