Infineon S29GL256S90DHA013
| Fabricante | |
| N.º de pieza fab. | S29GL256S90DHA013 |
| Nº LCSC | C20191763 |
| Emb. | FBGA-64(9x9) |
| Número de Cliente | |
| Atrib. clave | FBGA-64(9x9) Memory RoHS |
| Hoja de Datos | Infineon S29GL256S90DHA013 |
| Cumplimiento RoHS | 1 documentos disponibles |
Especificaciones del Producto
| Tipo | Descripción | |
|---|---|---|
| Categoría | Integrated Circuits (ICs)/Memory/Memory | |
| Fabricante | Infineon | |
| Emb. | FBGA-64(9x9) | |
| Features | Write enable latch;Power-on reset;Hardware write protection;Software write protection;Absolute write protection;ECC error correction;Power lock protection |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Integrated Circuits (ICs)/Memory/Memory | |
| Fabricante | Infineon |
| Tipo | Descripción | |
|---|---|---|
| Emb. | FBGA-64(9x9) | |
| Features | Write enable latch;Power-on reset;Hardware write protection;Software write protection;Absolute write protection;ECC error correction;Power lock protection |
Descripción
The S29GL01G/512/256/128S are MIRRORBIT Eclipse flash memory products manufactured using 65nm process technology. These devices feature page access times as fast as 15ns, with corresponding random access times as fast as 90ns. They incorporate a write buffer that allows programming of up to 256 words/512 bytes in a single operation, enabling effective programming times faster than standard programming algorithms. This makes these devices ideal for today's embedded applications demanding higher density, better performance, and lower power consumption.
Características
- 3.0V CMOS core with universal I/O
- 65nm MIRRORBIT Eclipse technology
- Single power supply for read/write/program/erase (VCC, 2.7V to 3.6V)
- Universal I/O feature
- Wide I/O voltage range (VIO: 1.65V to VCC)
- ×16 data bus
- Asynchronous 32-byte page read
- 512-byte program buffer
- Programming in page multiples up to 512 bytes
- Single-word and multi-word programming options
- Automatic error checking and correction (ECC) — internal hardware ECC corrects single-bit errors
- Sector erase
- Uniform 128KB sectors
- Suspend and resume commands for program and erase operations
- Status register, data polling, and RY/BY pin methods for device status determination
- Advanced Sector Protection (ASP)
- Volatile and non-volatile protection per sector
- Dedicated 1024-byte one-time programmable (OTP) array with two lockable regions
- Common Flash Interface (CFI) parameter table
- Temperature range/grade:
- Industrial (-40°C to +85°C)
- Industrial Plus (-40°C to +105°C)
- Automotive, AEC-Q100 Grade 3 (-40°C to +85°C)
- Automotive, AEC-Q100 Grade 2 (-40°C to +105°C)
- 100,000 program/erase cycles
- 20-year data retention
- Package options:
- 56-pin TSOP
- 64-ball LAA fortified BGA, 13mm×11mm
- 64-ball LAE fortified BGA, 9mm×9mm
- 56-ball VBU fortified BGA, 9mm×7mm
| Cant. | Prec. unit.(Solo como referencia) | Importo total |
|---|---|---|
| 1+ | $ 16.2561 | $ 16.26 |
| 200+ | $ 6.487 | $ 1297.40 |
| 500+ | $ 6.2698 | $ 3134.90 |
| 1,000+ | $ 6.1635 | $ 6163.50 |
Encapsulado Estándar2200/Full Reel | ||
Especificaciones del Producto
| Tipo | Descripción | |
|---|---|---|
| Categoría | Integrated Circuits (ICs)/Memory/Memory | |
| Fabricante | Infineon | |
| Emb. | FBGA-64(9x9) | |
| Features | Write enable latch;Power-on reset;Hardware write protection;Software write protection;Absolute write protection;ECC error correction;Power lock protection |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Integrated Circuits (ICs)/Memory/Memory | |
| Fabricante | Infineon |
| Tipo | Descripción | |
|---|---|---|
| Emb. | FBGA-64(9x9) | |
| Features | Write enable latch;Power-on reset;Hardware write protection;Software write protection;Absolute write protection;ECC error correction;Power lock protection |
Descripción
The S29GL01G/512/256/128S are MIRRORBIT Eclipse flash memory products manufactured using 65nm process technology. These devices feature page access times as fast as 15ns, with corresponding random access times as fast as 90ns. They incorporate a write buffer that allows programming of up to 256 words/512 bytes in a single operation, enabling effective programming times faster than standard programming algorithms. This makes these devices ideal for today's embedded applications demanding higher density, better performance, and lower power consumption.
Características
- 3.0V CMOS core with universal I/O
- 65nm MIRRORBIT Eclipse technology
- Single power supply for read/write/program/erase (VCC, 2.7V to 3.6V)
- Universal I/O feature
- Wide I/O voltage range (VIO: 1.65V to VCC)
- ×16 data bus
- Asynchronous 32-byte page read
- 512-byte program buffer
- Programming in page multiples up to 512 bytes
- Single-word and multi-word programming options
- Automatic error checking and correction (ECC) — internal hardware ECC corrects single-bit errors
- Sector erase
- Uniform 128KB sectors
- Suspend and resume commands for program and erase operations
- Status register, data polling, and RY/BY pin methods for device status determination
- Advanced Sector Protection (ASP)
- Volatile and non-volatile protection per sector
- Dedicated 1024-byte one-time programmable (OTP) array with two lockable regions
- Common Flash Interface (CFI) parameter table
- Temperature range/grade:
- Industrial (-40°C to +85°C)
- Industrial Plus (-40°C to +105°C)
- Automotive, AEC-Q100 Grade 3 (-40°C to +85°C)
- Automotive, AEC-Q100 Grade 2 (-40°C to +105°C)
- 100,000 program/erase cycles
- 20-year data retention
- Package options:
- 56-pin TSOP
- 64-ball LAA fortified BGA, 13mm×11mm
- 64-ball LAE fortified BGA, 9mm×9mm
- 56-ball VBU fortified BGA, 9mm×7mm
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | 3A991B1A |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
| Tipo | Detalles |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | 3A991B1A |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |

