BeRex Corp BCF040T
| Manufacturer | |
| MPN | BCF040T |
| LCSC Part # | C20056101 |
| Packaging | - |
| Customer # | |
| Key Attributes | 1.4W RF FETs, MOSFETs RoHS |
| Datasheet | BeRex Corp BCF040T |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/RF FETs, MOSFETs | |
| Manufacturer | BeRex Corp | |
| Packaging | - | |
| Pd - Power Dissipation | 1.4W |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/RF FETs, MOSFETs | |
| Manufacturer | BeRex Corp |
| Type | Description | |
|---|---|---|
| Packaging | - | |
| Pd - Power Dissipation | 1.4W |
Introduction
BeRex BCF040T is a GaAs power MESFET with a nominal gate length of 0.3 microns and a gate width of 400 microns, making it well suited for applications requiring high OIP3 linearity and low phase noise while delivering high gain and moderate power across DC to 26.5 GHz. The device is suitable for both broadband and narrowband applications. The BCF040T is fabricated using an advanced metallization process, with on-wafer device screening to ensure reliability. These die are Si3N4 passivated for enhanced reliability.
Features
- Typical output power 23.0 dBm
- Typical power gain 13 dB at 12 GHz
- Low phase noise
- 0.3×400 µm recessed gate
Applications
- Commercial Applications - Test & Measurement
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 72.2784 | $ 72.28 |
| 200+ | $ 28.8396 | $ 5767.92 |
| 500+ | $ 27.8757 | $ 13937.85 |
| 1,000+ | $ 27.4001 | $ 27400.10 |
Standard Packaging5/Full Tray | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/RF FETs, MOSFETs | |
| Manufacturer | BeRex Corp | |
| Packaging | - | |
| Pd - Power Dissipation | 1.4W |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/RF FETs, MOSFETs | |
| Manufacturer | BeRex Corp |
| Type | Description | |
|---|---|---|
| Packaging | - | |
| Pd - Power Dissipation | 1.4W |
Introduction
BeRex BCF040T is a GaAs power MESFET with a nominal gate length of 0.3 microns and a gate width of 400 microns, making it well suited for applications requiring high OIP3 linearity and low phase noise while delivering high gain and moderate power across DC to 26.5 GHz. The device is suitable for both broadband and narrowband applications. The BCF040T is fabricated using an advanced metallization process, with on-wafer device screening to ensure reliability. These die are Si3N4 passivated for enhanced reliability.
Features
- Typical output power 23.0 dBm
- Typical power gain 13 dB at 12 GHz
- Low phase noise
- 0.3×400 µm recessed gate
Applications
- Commercial Applications - Test & Measurement
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |