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ST STD3NK100Z
| Manufacturer | |
| MPN | STD3NK100Z |
| LCSC Part # | C200451 |
| Packaging | TO-252(DPAK) |
| Customer # | |
| Key Attributes | MOSFET N-CH 1kV 2.5A TO-252(DPAK) |
| Datasheet | ST STD3NK100Z |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-252(DPAK) | |
| Output Capacitance(Coss) | 53pF | |
| Pd - Power Dissipation | 90W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 1kV | |
| Current - Continuous Drain(Id) | 2.5A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 12pF | |
| RDS(on) | 6Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 601pF | |
| Gate Charge(Qg) | 18nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-252(DPAK) | |
| Output Capacitance(Coss) | 53pF | |
| Pd - Power Dissipation | 90W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 1kV | |
| Current - Continuous Drain(Id) | 2.5A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 12pF | |
| RDS(on) | 6Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 601pF | |
| Gate Charge(Qg) | 18nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, specialties is taken to ensure a very good dv/dt capability for the most demanding application. Such series complements ST full range of high voltage Power MOSFETs.
Features
AI Translation
- Extremely high dv/dt capability
- 100% avalanche tested
- Gate charge minimized
- Very low intrinsic capacitances
- Very good manufacturing repeatability
Applications
AI Translation
- Switching applications
Every Order Guarantee
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In-Stock: 232
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Minimum: 1Multiple: 1Sales Unit: Piece
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.1866 | $ 1.19 |
| 10+ | $ 1.0013 | $ 10.01 |
| 30+ | $ 0.9086 | $ 27.26 |
| 100+ | $ 0.816 | $ 81.60 |
| 500+ | $ 0.7607 | $ 380.35 |
| 1,000+ | $ 0.7331 | $ 733.10 |
Standard Packaging2500/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-252(DPAK) | |
| Output Capacitance(Coss) | 53pF | |
| Pd - Power Dissipation | 90W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 1kV | |
| Current - Continuous Drain(Id) | 2.5A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 12pF | |
| RDS(on) | 6Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 601pF | |
| Gate Charge(Qg) | 18nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-252(DPAK) | |
| Output Capacitance(Coss) | 53pF | |
| Pd - Power Dissipation | 90W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 1kV | |
| Current - Continuous Drain(Id) | 2.5A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 12pF | |
| RDS(on) | 6Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 601pF | |
| Gate Charge(Qg) | 18nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, specialties is taken to ensure a very good dv/dt capability for the most demanding application. Such series complements ST full range of high voltage Power MOSFETs.
Features
AI Translation
- Extremely high dv/dt capability
- 100% avalanche tested
- Gate charge minimized
- Very low intrinsic capacitances
- Very good manufacturing repeatability
Applications
AI Translation
- Switching applications
C200451 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| KND42120A | KIA Semicon Tech | TO-252 | 2,491 | $ 0.5884 | ||
| 3N100G-TN3-R | UTC | TO-252 | 1,112 | $ 0.3661 | ||
| CMD3N120 | Cmos | TO-252 | 274 | $0.6213 $0.6539 | ||
| STD3NK90ZT4 | ST | TO-252(DPAK) | 4,060 | $ 0.6916 | ||
| SL5N100D | Slkor | TO-252(DPAK) | 1,195 | $0.5877 $0.653 | ||
| MS10N100HCD0 | MASPOWER | TO-252 | 100 | $ 1.0669 | ||
| TPM12003NHK3 | TECH PUBLIC | TO-252 | 2,412 | $ 1.0805 | ||
| 3N120 | TECH PUBLIC | TO-252 | 1,871 | $ 0.7052 | ||
| TPSTD3NK100Z | TECH PUBLIC | TO-252 | 5,162 | $ 1.0346 | ||
| MS5N100FD | MASPOWER | TO-252 | 410 | $ 0.7701 |