DIODES DMC2710UVQ-7
| Manufacturer | |
| MPN | DMC2710UVQ-7 |
| LCSC Part # | C19949265 |
| Packaging | SOT-563 |
| Customer # | |
| Key Attributes | 20V 1.1A 800mW 700mΩ@4.5V 1V SOT-563 FET, MOSFET Arrays RoHS |
| Datasheet | DIODES DMC2710UVQ-7 |
| RoHS Compliance | 4 documents available |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | DIODES | |
| Packaging | SOT-563 | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 1.1A | |
| Pd - Power Dissipation | 800mW | |
| RDS(on) | 700mΩ@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | N-Channel + P-Channel | |
| Gate Charge(Qg) | 700pC@4.5V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | DIODES | |
| Packaging | SOT-563 | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 1.1A |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 800mW | |
| RDS(on) | 700mΩ@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | N-Channel + P-Channel | |
| Gate Charge(Qg) | 700pC@4.5V |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This next-generation MOSFET is designed to minimize on-resistance (RDS(ON)) while maintaining superior switching performance, making it ideal for high-efficiency power management applications.
Features
AI Translation
- Low on-resistance
- Low gate threshold voltage
- N-channel: VGS(TH) < 1 V
- P-channel: VGS(TH) < -1 V
- Low input capacitance
- Fast switching speed
- Low input/output leakage current
- Complementary pair MOSFET
- Ultra-compact surface mount package
- ESD protection on gate
- Fully lead-free and RoHS compliant
- Halogen- and antimony-free, "green" device
- Suitable for automotive applications requiring specific change control; AEC-Q101 qualified, PPAP capable, manufactured in IATF 16949 certified facility
Applications
AI Translation
- Battery-powered systems and solid-state relay drivers: relays, solenoids, lamps, hammers, displays, memories, transistors, etc.
- Power conversion circuits
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
In-Stock: 90
90 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.259 | $ 0.26 |
| 10+ | $ 0.2524 | $ 2.52 |
| 30+ | $ 0.2491 | $ 7.47 |
| 100+ | $ 0.2442 | $ 24.42 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
$
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | DIODES | |
| Packaging | SOT-563 | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 1.1A | |
| Pd - Power Dissipation | 800mW | |
| RDS(on) | 700mΩ@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | N-Channel + P-Channel | |
| Gate Charge(Qg) | 700pC@4.5V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | DIODES | |
| Packaging | SOT-563 | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 1.1A |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 800mW | |
| RDS(on) | 700mΩ@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | N-Channel + P-Channel | |
| Gate Charge(Qg) | 700pC@4.5V |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This next-generation MOSFET is designed to minimize on-resistance (RDS(ON)) while maintaining superior switching performance, making it ideal for high-efficiency power management applications.
Features
AI Translation
- Low on-resistance
- Low gate threshold voltage
- N-channel: VGS(TH) < 1 V
- P-channel: VGS(TH) < -1 V
- Low input capacitance
- Fast switching speed
- Low input/output leakage current
- Complementary pair MOSFET
- Ultra-compact surface mount package
- ESD protection on gate
- Fully lead-free and RoHS compliant
- Halogen- and antimony-free, "green" device
- Suitable for automotive applications requiring specific change control; AEC-Q101 qualified, PPAP capable, manufactured in IATF 16949 certified facility
Applications
AI Translation
- Battery-powered systems and solid-state relay drivers: relays, solenoids, lamps, hammers, displays, memories, transistors, etc.
- Power conversion circuits
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



