Taiwan Semiconductor TSM05N03CW
| Manufacturer | Taiwan SemiconductorAsian Brands |
| MPN | TSM05N03CW |
| LCSC Part # | C19856033 |
| Packaging | SOT-223 |
| Customer # | |
| Key Attributes | 30V 5A 3W 90mΩ@4.5V SOT-223 Single FETs, MOSFETs RoHS |
| Datasheet | Taiwan Semiconductor TSM05N03CW |
| RoHS Compliance | 2 documents available |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Taiwan Semiconductor | |
| Packaging | SOT-223 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 5A | |
| Pd - Power Dissipation | 3W | |
| RDS(on) | 90mΩ@4.5V | |
| Gate Charge(Qg) | 7nC | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | - |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Taiwan Semiconductor | |
| Packaging | SOT-223 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 5A |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 3W | |
| RDS(on) | 90mΩ@4.5V | |
| Gate Charge(Qg) | 7nC | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | - |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- Advanced trench process technology
- High-density cell design for ultra-low on-resistance
Applications
AI Translation
- Load Switch - Power Amplifier Switch
Every Order Guarantee
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 1.2717 | $ 1.27 |
| 200+ | $ 0.5081 | $ 101.62 |
| 500+ | $ 0.4914 | $ 245.70 |
| 1,000+ | $ 0.4823 | $ 482.30 |
Standard Packaging5000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Taiwan Semiconductor | |
| Packaging | SOT-223 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 5A | |
| Pd - Power Dissipation | 3W | |
| RDS(on) | 90mΩ@4.5V | |
| Gate Charge(Qg) | 7nC | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | - |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Taiwan Semiconductor | |
| Packaging | SOT-223 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 5A |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 3W | |
| RDS(on) | 90mΩ@4.5V | |
| Gate Charge(Qg) | 7nC | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | - |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- Advanced trench process technology
- High-density cell design for ultra-low on-resistance
Applications
AI Translation
- Load Switch - Power Amplifier Switch
C19856033 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

