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Suzhou Good-Ark Elec GSFC3401
| Manufacturer | Suzhou Good-Ark ElecAsian Brands |
| MPN | GSFC3401 |
| LCSC Part # | C19841158 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | 1.2W 30V 4.4A 66mΩ@4.5V 1 P-Channel P-Channel SOT-23 Single FETs, MOSFETs RoHS |
| Datasheet | Suzhou Good-Ark Elec GSFC3401 |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 3 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Suzhou Good-Ark Elec | |
| Packaging | SOT-23 | |
| Output Capacitance(Coss) | 60pF | |
| Ciss-Input Capacitance | 800pF | |
| Pd - Power Dissipation | 1.2W | |
| Drain to Source Voltage | 30V | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 4.4A | |
| Reverse Transfer Capacitance (Crss) | 58pF | |
| RDS(on) | 66mΩ@4.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 16nC@10V | |
| Vgs | ±12V | |
| Gate Threshold Voltage (Vgs(th)) | 1.4V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Suzhou Good-Ark Elec | |
| Packaging | SOT-23 | |
| Output Capacitance(Coss) | 60pF | |
| Ciss-Input Capacitance | 800pF | |
| Pd - Power Dissipation | 1.2W | |
| Drain to Source Voltage | 30V | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 4.4A | |
| Reverse Transfer Capacitance (Crss) | 58pF | |
| RDS(on) | 66mΩ@4.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 16nC@10V | |
| Vgs | ±12V | |
| Gate Threshold Voltage (Vgs(th)) | 1.4V | |
| Type | P-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
The GSFC3401 employs the latest technology to achieve ultra-low on-resistance and low gate charge, delivering best-in-class performance. These characteristics make this series highly efficient with excellent thermal performance, enabling reliable use in power management, synchronous rectification, battery protection, load switching, and a wide range of other applications.
Features
AI Translation
- Advanced MOSFET process technology
- Low on-resistance and low gate charge
- Low switching loss and drive loss
- Fast switching and reverse body recovery
- High durability and robustness
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Suzhou Good-Ark Elec | |
| Packaging | SOT-23 | |
| Output Capacitance(Coss) | 60pF | |
| Ciss-Input Capacitance | 800pF | |
| Pd - Power Dissipation | 1.2W | |
| Drain to Source Voltage | 30V | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 4.4A | |
| Reverse Transfer Capacitance (Crss) | 58pF | |
| RDS(on) | 66mΩ@4.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 16nC@10V | |
| Vgs | ±12V | |
| Gate Threshold Voltage (Vgs(th)) | 1.4V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Suzhou Good-Ark Elec | |
| Packaging | SOT-23 | |
| Output Capacitance(Coss) | 60pF | |
| Ciss-Input Capacitance | 800pF | |
| Pd - Power Dissipation | 1.2W | |
| Drain to Source Voltage | 30V | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 4.4A | |
| Reverse Transfer Capacitance (Crss) | 58pF | |
| RDS(on) | 66mΩ@4.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 16nC@10V | |
| Vgs | ±12V | |
| Gate Threshold Voltage (Vgs(th)) | 1.4V | |
| Type | P-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
The GSFC3401 employs the latest technology to achieve ultra-low on-resistance and low gate charge, delivering best-in-class performance. These characteristics make this series highly efficient with excellent thermal performance, enabling reliable use in power management, synchronous rectification, battery protection, load switching, and a wide range of other applications.
Features
AI Translation
- Advanced MOSFET process technology
- Low on-resistance and low gate charge
- Low switching loss and drive loss
- Fast switching and reverse body recovery
- High durability and robustness
C19841158 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |