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TOSHIBA DF2S14P2CTC,L3F
| Manufacturer | |
| MPN | DF2S14P2CTC,L3F |
| LCSC Part # | C1973913 |
| Packaging | CST-2-C |
| Customer # | |
| Key Attributes | 32VC Clamp 50A@8/20us Ipp TVS DIODE CST-2-C |
| Datasheet | TOSHIBA DF2S14P2CTC,L3F |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Circuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes | |
| Manufacturer | TOSHIBA | |
| Packaging | CST-2-C | |
| Clamping Voltage | 32V | |
| Operating Temperature | - | |
| Peak Pulse Current (Ipp) | 50A@8/20us | |
| Peak Pulse Power Dissipation (Ppp) | 1.6kW@8/20us | |
| Voltage - Breakdown | 13.5V | |
| type | TVS | |
| Reverse Leakage Current (Ir) | 100nA | |
| Reverse Stand-Off Voltage (Vrwm) | 12.6V |
| Type | Description | |
|---|---|---|
| Category | Circuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes | |
| Manufacturer | TOSHIBA | |
| Packaging | CST-2-C | |
| Clamping Voltage | 32V | |
| Operating Temperature | - | |
| Peak Pulse Current (Ipp) | 50A@8/20us |
| Type | Description | |
|---|---|---|
| Peak Pulse Power Dissipation (Ppp) | 1.6kW@8/20us | |
| Voltage - Breakdown | 13.5V | |
| type | TVS | |
| Reverse Leakage Current (Ir) | 100nA | |
| Reverse Stand-Off Voltage (Vrwm) | 12.6V |
Introduction
The DF2S14P2CTC is a TVS diode (ESD protection diode) protects semiconductor devices used in mobile device interfaces and other applications to protect against static electricity and noise. The DF2S14P2CTC has realized high IPP, in order to protect a semiconductor devices from the indirect lightning stroke and the transition voltage (at the time of power activation). Furthermore, the DF2S14P2CTC is housed in an ultra-compact package (1.6 mm×0.8 mm) to meet applications that require a small footprint.
Features
- Suitable for use with a 12 V signal line. (VRWM≤12.6 V)
- Protects devices with its high ESD performance. (VESD = ±30 kV (Contact / Air) @IEC61000 - 4 - 2)
- Low dynamic resistance protects semiconductor devices from static electricity and noise. (RDYN = 0.08 Ω (typ.))
- Snapback characteristics realizing low clamping voltage protects semiconductor devices. (VC = 28 V@IPP = 50 A (typ.))
- Compact package is suitable for use in high density board layouts such as in mobile devices. 1.6 mm×0.8 mm size (Nickname: CST2C)
Applications
- Mobile Equipment
- Smartphones
- Tablets
- Notebook PCs
- Desktop PCs
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.2118 | $ 1.06 |
| 50+ | $ 0.2082 | $ 10.41 |
| 150+ | $ 0.2059 | $ 30.89 |
| 500+ | $ 0.2035 | $ 101.75 |
Standard Packaging10000/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Circuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes | |
| Manufacturer | TOSHIBA | |
| Packaging | CST-2-C | |
| Clamping Voltage | 32V | |
| Operating Temperature | - | |
| Peak Pulse Current (Ipp) | 50A@8/20us | |
| Peak Pulse Power Dissipation (Ppp) | 1.6kW@8/20us | |
| Voltage - Breakdown | 13.5V | |
| type | TVS | |
| Reverse Leakage Current (Ir) | 100nA | |
| Reverse Stand-Off Voltage (Vrwm) | 12.6V |
| Type | Description | |
|---|---|---|
| Category | Circuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes | |
| Manufacturer | TOSHIBA | |
| Packaging | CST-2-C | |
| Clamping Voltage | 32V | |
| Operating Temperature | - | |
| Peak Pulse Current (Ipp) | 50A@8/20us |
| Type | Description | |
|---|---|---|
| Peak Pulse Power Dissipation (Ppp) | 1.6kW@8/20us | |
| Voltage - Breakdown | 13.5V | |
| type | TVS | |
| Reverse Leakage Current (Ir) | 100nA | |
| Reverse Stand-Off Voltage (Vrwm) | 12.6V |
Introduction
The DF2S14P2CTC is a TVS diode (ESD protection diode) protects semiconductor devices used in mobile device interfaces and other applications to protect against static electricity and noise. The DF2S14P2CTC has realized high IPP, in order to protect a semiconductor devices from the indirect lightning stroke and the transition voltage (at the time of power activation). Furthermore, the DF2S14P2CTC is housed in an ultra-compact package (1.6 mm×0.8 mm) to meet applications that require a small footprint.
Features
- Suitable for use with a 12 V signal line. (VRWM≤12.6 V)
- Protects devices with its high ESD performance. (VESD = ±30 kV (Contact / Air) @IEC61000 - 4 - 2)
- Low dynamic resistance protects semiconductor devices from static electricity and noise. (RDYN = 0.08 Ω (typ.))
- Snapback characteristics realizing low clamping voltage protects semiconductor devices. (VC = 28 V@IPP = 50 A (typ.))
- Compact package is suitable for use in high density board layouts such as in mobile devices. 1.6 mm×0.8 mm size (Nickname: CST2C)
Applications
- Mobile Equipment
- Smartphones
- Tablets
- Notebook PCs
- Desktop PCs
C1973913 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Type | Details |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |