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micron M29W256GH70ZS6E product image
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micron M29W256GH70ZS6E

Manufacturer
micron
MPN
M29W256GH70ZS6E
LCSC Part #
C19538239
Packaging
FBGA-64(11x13)
Customer #
Key Attributes
256Mbit 2.7V~3.6V Parallel FBGA-64(11x13) Memory RoHS
Datasheetmicron M29W256GH70ZS6E
RoHS Compliance1 documents available
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QtyUnit Price(Reference Only)Total Amount
1+$ 9.9573$ 9.96
200+$ 3.9735$ 794.70
500+$ 3.8415$ 1920.75
960+$ 3.7748$ 3623.81
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Products Specifications

All
TypeDescription
CategoryIntegrated Circuits (ICs)/Memory/Memory
Manufacturermicron
PackagingFBGA-64(11x13)
Operating Temperature-40℃~+85℃
FeaturesHardware write protection;Software write protection;Absolute write protection
Memory Size256Mbit
Voltage - Supply2.7V~3.6V
Program / Erase Cycles100,000 cycles
Clock Frequency-
Data Retention - TDR (Year)20 Years
Block Erase Time(tBE)-
Write Cycle Time(tWC)-
Page Programming Time (Tpp)16us
Standby Supply Current100uA
InterfaceParallel
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Features

AI Translation
  • Supply voltage – V_CC = 2.7–3.6V (program, erase, read) – V_CCQ = 1.65–3.6V (I/O buffers) – V_PPH = 12V for fast program (optional)
  • Asynchronous random/page read – Page size: 8 words or 16 bytes Page access: 25ns, 30ns – Random access: 60ns, 70ns, 80ns
  • Fast program commands: 32-word (64-byte) write buffer
  • Enhanced buffered program commands: 256-word
  • Program time 16µs per byte/word (TYP) Chip program time: 10s with V_PPH and 16s without V_PPH
  • Memory organization – Uniform blocks: 256 main blocks, 128KB, or 64-Kwords each
  • Program/erase controller – Embedded byte/word program algorithms
  • Program/erase suspend and resume capability – Read from any block during a PROGRAM SUSPEND operation Read or program another block during an ERASE SUSPEND operation
  • Unlock bypass, block erase, chip erase, write to buffer and program – Fast buffered/batch programming – Fast block/chip erase
  • V_PP/WP# pin protection – Protects first or last block regardless of block -protection settings
  • Software protection – Volatile protection – Nonvolatile protection – Password protection
  • Extended memory block – 128-word (256-byte) memory block for permanent, secure identification – Programmed or locked at the factory or by the customer
  • Common Flash interface – 64-bit security code
  • Low power consumption: Standby and automatic mode
  • JESD47H-compliant – 100,000 minimum PROGRAM/ERASE cycles per block – Data retention: 20 years (TYP)
  • 65nm single-level cell (SLC) process technology
  • Fortified BGA, TBGA, and TSOP packages
  • "Green" packages available – RoHS-compliant – Halogen-free
  • Automotive device grade (6) temperature: -40℃ to +85℃ (automotive grade-certified)
  • Automotive device grade (3) temperature: -40℃ to +125℃ (automotive grade-certified)