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Infineon S29AS008J70BFI040 product image
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Infineon S29AS008J70BFI040

Manufacturer
Infineon
MPN
S29AS008J70BFI040
LCSC Part #
C19503977
Packaging
FBGA-48(6.2x8.2)
Customer #
Key Attributes
8Mbit 1.65V~1.95V Parallel FBGA-48(6.2x8.2) Memory RoHS
DatasheetInfineon S29AS008J70BFI040
RoHS Compliance1 documents available
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338+$ 1.323$ 447.17
676+$ 1.279$ 864.60
1,014+$ 1.2578$ 1275.41
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Products Specifications

All
TypeDescription
CategoryIntegrated Circuits (ICs)/Memory/Memory
ManufacturerInfineon
PackagingFBGA-48(6.2x8.2)
Operating Temperature-40℃~+85℃
Features-
Memory Size8Mbit
Voltage - Supply1.65V~1.95V
Program / Erase Cycles1,000,000 cycles
Clock Frequency-
Data Retention - TDR (Year)20 Years
Block Erase Time(tBE)-
Write Cycle Time(tWC)-
Page Programming Time (Tpp)-
Standby Supply Current8uA
InterfaceParallel
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Introduction

AI Translation

The S29AS008J is a 8 Mbit, 1.8 Volt-only Flash memory organized as 1,048,576 bytes or 524,288 words with a x8/x16 bus and either top or bottom boot sector architecture. The device is offered in 48-pin TSOP and 48-ball FBGA packages. The word-wide data (x16) appears on DQ15–DQ0; the byte-wide (x8) data appears on DQ7–DQ0. This device is designed to be programmed and erased in-system with the standard system 1.8 volt VCC supply. A 12.0 VPP or 5.0 VCC are not required for program or erase operations. The device can also be programmed in standard EPROM programmers. The device offers access time of 70 ns allowing high speed microprocessors to operate without wait states. To eliminate bus contention the device has separate chip enable (CE#), write enable (WE#) and output enable (OE#) controls. The device requires only a single 1.8 volt power supply for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations. The S29AS008J is entirely command set compatible with the JEDEC single-power-supply Flash standard. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine that controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from other Flash or EPROM devices. Device programming occurs by executing the program command sequence. This initiates the Embedded Program algorithm— an internal algorithm that automatically times the program pulse widths and verifies proper cell margin. The Unlock Bypass mode facilitates faster programming times by requiring only two write cycles to program data instead of four. Device erasure occurs by executing the erase command sequence. This initiates the Embedded Erase algorithm—an internal algorithm that automatically preprograms the array (if it is not already programmed) before executing the erase operation. During erase, the device automatically times the erase pulse widths and verifies proper cell margin. The host system can detect whether a program or erase operation is complete by observing the RY/BY# pin, or by reading the DQ7 (Data# Polling) and DQ6 (toggle) status bits.

Features

AI Translation
  • Single Power Supply Operation: Full voltage range: 1.65 to 1.95 volt read and write operations for battery-powered applications
  • Manufactured on 110 nm Process Technology
  • Secured Silicon Sector region: 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number, accessible through a command sequence; May be programmed and locked at the factory or by the customer
  • Flexible Sector Architecture: Eight 8 Kbyte and fifteen 64 Kbyte sectors (byte mode); Eight 4 Kword, and fifteen 32 Kword sectors (word mode)
  • Sector Group Protection Features: A hardware method of locking a sector to prevent any program or erase operations within that sector; Sectors can be locked in-system or via programming equipment; Temporary Sector Group Unprotect feature allows code changes in previously locked sectors
  • Unlock Bypass Program Command: Reduces overall programming time when issuing multiple program command sequences
  • Top or Bottom Boot Block Configurations Available
  • Compatibility with JEDEC standards: Pinout and software compatible with single-power supply Flash; Superior inadvertent write protection
  • High Performance: Access times as fast as 70 ns; Industrial temperature range (-40℃ to +85℃); Word programming time as fast as 6 µs (typical)
  • Ultra Low Power Consumption (typical values at 5 MHz): 15 µA Automatic Sleep mode current; 8 µA standby mode current; 8 mA read current; 20 mA program/erase current
  • Cycling Endurance: 1,000,000 cycles per sector typical
  • Data Retention: 20 years typical
  • CFI (Common Flash Interface) Compliant: Provides device-specific information to the system, allowing host software to easily reconfigure for different Flash devices
  • Erase Suspend/Erase Resume: Suspends an erase operation to read data from, or program data to, a sector that is not being erased, then resumes the erase operation
  • Data# Polling and Toggle Bits: Provides a software method of detecting program or erase operation completion
  • Ready/Busy# Pin (RY/BY#): Provides a hardware method of detecting program or erase cycle completion
  • Hardware Reset Pin (RESET#): Hardware method to reset the device to reading array data
  • WP# input pin: Write protect (WP#) function allows protection of two outermost boot sectors (boot sector models only), regardless of sector group protect status