MICROCHIP AT28C17-20JC
| Manufacturer | |
| MPN | AT28C17-20JC |
| LCSC Part # | C19368687 |
| Packaging | PLCC-32(11.4x14) |
| Customer # | |
| Key Attributes | 16Kbit Parallel Port (Parallel) PLCC-32(11.4x14) Memory |
| Datasheet | MICROCHIP AT28C17-20JC |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | MICROCHIP | |
| Packaging | PLCC-32(11.4x14) | |
| Operating Temperature | 0℃~+70℃ | |
| Features | Built-in error correction code (ECC) function;Hardware write protection function | |
| Memory Size | 16Kbit | |
| Voltage - Supply | 4.5V~5.5V;30mA | |
| Clock Frequency | - | |
| Access Time | 200ns | |
| Data Retention - TDR (Year) | 10 years | |
| Write Cycle Time(tWC) | 1ms | |
| Standby Supply Current | 100uA | |
| Interface | Parallel Port (Parallel) | |
| Write Cycle Endurance | 10,000 cycles |
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | MICROCHIP | |
| Packaging | PLCC-32(11.4x14) | |
| Operating Temperature | 0℃~+70℃ | |
| Features | Built-in error correction code (ECC) function;Hardware write protection function | |
| Memory Size | 16Kbit | |
| Voltage - Supply | 4.5V~5.5V;30mA |
| Type | Description | |
|---|---|---|
| Clock Frequency | - | |
| Access Time | 200ns | |
| Data Retention - TDR (Year) | 10 years | |
| Write Cycle Time(tWC) | 1ms | |
| Standby Supply Current | 100uA | |
| Interface | Parallel Port (Parallel) | |
| Write Cycle Endurance | 10,000 cycles |
Introduction
The AT28C17 is a low-power, high-performance, easy-to-use electrically erasable programmable read-only memory. The AT28C17 is a 16K memory organized as 2048 words × 8 bits. The device is manufactured using Atmel's reliable nonvolatile CMOS technology. The AT28C17 accesses during read and write cycles in a manner similar to static RAM, requiring no external components. During a byte write, the address and data are internally latched, freeing the microprocessor address and data buses for other operations. After the write cycle is initiated, the device enters a busy state and automatically clears and writes the latched data using an internal control timer. The device includes two methods for detecting the end of a write cycle: RDY/BUSY level detection and DATA polling of I/O7. Once the end of a write cycle is detected, a new read or write access can begin. CMOS technology provides fast 150 ns access time at low power. Standby current is less than 100 μA when the chip is deselected. Atmel's 28C17 includes additional features to ensure high quality and manufacturability. The device incorporates internal error correction to improve endurance and data retention characteristics. An additional 32-byte E²PROM is also available for device identification or tracking.
Features
- Fast read access time - 150 ns
- Fast byte write - 200 μs or 1 ms
- Self-timed byte write cycle
- Internal address and data latches
- Internal control timer
- Auto clear before write
- Direct microprocessor control
- Data polling
- READY/BUSY open-drain output
- Low power consumption
- 30 mA active current
- 100 μA CMOS standby current
- High reliability
- Endurance: 10⁴ or 10⁵ cycles
- Data retention: 10 years
- 5V ± 10% supply voltage
- CMOS and TTL compatible I/O
- JEDEC-approved byte-wide pinout
- Military, commercial, and industrial temperature ranges
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | MICROCHIP | |
| Packaging | PLCC-32(11.4x14) | |
| Operating Temperature | 0℃~+70℃ | |
| Features | Built-in error correction code (ECC) function;Hardware write protection function | |
| Memory Size | 16Kbit | |
| Voltage - Supply | 4.5V~5.5V;30mA | |
| Clock Frequency | - | |
| Access Time | 200ns | |
| Data Retention - TDR (Year) | 10 years | |
| Write Cycle Time(tWC) | 1ms | |
| Standby Supply Current | 100uA | |
| Interface | Parallel Port (Parallel) | |
| Write Cycle Endurance | 10,000 cycles |
| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory | |
| Manufacturer | MICROCHIP | |
| Packaging | PLCC-32(11.4x14) | |
| Operating Temperature | 0℃~+70℃ | |
| Features | Built-in error correction code (ECC) function;Hardware write protection function | |
| Memory Size | 16Kbit | |
| Voltage - Supply | 4.5V~5.5V;30mA |
| Type | Description | |
|---|---|---|
| Clock Frequency | - | |
| Access Time | 200ns | |
| Data Retention - TDR (Year) | 10 years | |
| Write Cycle Time(tWC) | 1ms | |
| Standby Supply Current | 100uA | |
| Interface | Parallel Port (Parallel) | |
| Write Cycle Endurance | 10,000 cycles |
Introduction
The AT28C17 is a low-power, high-performance, easy-to-use electrically erasable programmable read-only memory. The AT28C17 is a 16K memory organized as 2048 words × 8 bits. The device is manufactured using Atmel's reliable nonvolatile CMOS technology. The AT28C17 accesses during read and write cycles in a manner similar to static RAM, requiring no external components. During a byte write, the address and data are internally latched, freeing the microprocessor address and data buses for other operations. After the write cycle is initiated, the device enters a busy state and automatically clears and writes the latched data using an internal control timer. The device includes two methods for detecting the end of a write cycle: RDY/BUSY level detection and DATA polling of I/O7. Once the end of a write cycle is detected, a new read or write access can begin. CMOS technology provides fast 150 ns access time at low power. Standby current is less than 100 μA when the chip is deselected. Atmel's 28C17 includes additional features to ensure high quality and manufacturability. The device incorporates internal error correction to improve endurance and data retention characteristics. An additional 32-byte E²PROM is also available for device identification or tracking.
Features
- Fast read access time - 150 ns
- Fast byte write - 200 μs or 1 ms
- Self-timed byte write cycle
- Internal address and data latches
- Internal control timer
- Auto clear before write
- Direct microprocessor control
- Data polling
- READY/BUSY open-drain output
- Low power consumption
- 30 mA active current
- 100 μA CMOS standby current
- High reliability
- Endurance: 10⁴ or 10⁵ cycles
- Data retention: 10 years
- 5V ± 10% supply voltage
- CMOS and TTL compatible I/O
- JEDEC-approved byte-wide pinout
- Military, commercial, and industrial temperature ranges
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| Type | Details |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |

