micron M29W400DT45N6E

The M29W400D is a 4 Mbit (512 K x 8 or 256 K x 16) non-volatile memory that supports read, erase, and reprogram operations. These operations are enabled by a single low-voltage (2.7 ~ 3.6 V) supply. On power-up, the memory defaults to read mode and can be read like a ROM or EPROM. The memory is divided into independently erasable blocks, allowing valid data to be retained while erasing obsolete data. Each block can be individually protected against unintended program or erase commands that could alter memory contents. Program and erase commands are written through the memory's command interface. An on-chip program/erase controller simplifies the memory programming and erasing process.

• Supply voltage: VCC 2.7 ~ 3.6 V for program, erase, and read operations
• Access time: 45, 55, 70 ns
• Program time: 10 μs typical per byte/word
• 11 memory blocks: 1 boot block (top or bottom location), 2 parameter blocks, and 8 main blocks
• Program/erase controller: embedded byte/word program algorithm with erase suspend and resume modes, allowing read and program of another block during erase suspend
• Unlock bypass program command: faster production/bulk programming
• Temporary block unprotect mode
• Low power consumption: standby and auto standby modes
• 100,000 program/erase cycles per block
• Electronic signature: manufacturer code 0020h, top device code M29W400DT 00EEh, bottom device code M29W400DB 00EFh
• RoHS compliant packages
• Automotive Grade 3 device: temperature range -40 ~ 125°C, automotive qualified
• Package types: SO44 (M)(1), TSOP48 (N) (12×20 mm), TFBGA48 (ZA)(1) (6×9 mm), TFBGA48 (ZE) (6×8 mm)

Note: These packages are no longer in mass production.