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EDA ModelsEasyEDA
HXY MOSFET MMDT3904
| Manufacturer | HXY MOSFETAsian Brands |
| MPN | MMDT3904 |
| LCSC Part # | C19267761 |
| Packaging | SOT-363 |
| Customer # | |
| Key Attributes | TRANS NPN 40V 200mA SOT-363 |
| Datasheet | HXY MOSFET MMDT3904 |
| Alternative Parts | 2 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | HXY MOSFET | |
| Packaging | SOT-363 | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Collector Cutoff | 50nA | |
| Transition frequency(fT) | 300MHz | |
| Collector - Emitter Voltage VCEO | 40V | |
| DC Current Gain | 300 | |
| Emitter-Base Voltage VEBO | 6V | |
| Current - Collector(Ic) | 200mA | |
| Pd - Power Dissipation | 200mW | |
| Configuration | Standalone | |
| Number | 2 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 300mV |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | HXY MOSFET | |
| Packaging | SOT-363 | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Collector Cutoff | 50nA | |
| Transition frequency(fT) | 300MHz | |
| Collector - Emitter Voltage VCEO | 40V | |
| DC Current Gain | 300 |
| Type | Description | |
|---|---|---|
| Emitter-Base Voltage VEBO | 6V | |
| Current - Collector(Ic) | 200mA | |
| Pd - Power Dissipation | 200mW | |
| Configuration | Standalone | |
| Number | 2 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 300mV |
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Features
AI Translation
- Epitaxial planar die construction.
- Ideal for low power amplification and switching.
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | HXY MOSFET | |
| Packaging | SOT-363 | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Collector Cutoff | 50nA | |
| Transition frequency(fT) | 300MHz | |
| Collector - Emitter Voltage VCEO | 40V | |
| DC Current Gain | 300 | |
| Emitter-Base Voltage VEBO | 6V | |
| Current - Collector(Ic) | 200mA | |
| Pd - Power Dissipation | 200mW | |
| Configuration | Standalone | |
| Number | 2 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 300mV |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | HXY MOSFET | |
| Packaging | SOT-363 | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Collector Cutoff | 50nA | |
| Transition frequency(fT) | 300MHz | |
| Collector - Emitter Voltage VCEO | 40V | |
| DC Current Gain | 300 |
| Type | Description | |
|---|---|---|
| Emitter-Base Voltage VEBO | 6V | |
| Current - Collector(Ic) | 200mA | |
| Pd - Power Dissipation | 200mW | |
| Configuration | Standalone | |
| Number | 2 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 300mV |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- Epitaxial planar die construction.
- Ideal for low power amplification and switching.
C19267761 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Type | Details |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |