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VBsemi Elec SI7852DP-VB
| Manufacturer | VBsemi ElecAsian Brands |
| MPN | SI7852DP-VB |
| LCSC Part # | C19190288 |
| Packaging | QFN-8(5x6) |
| Customer # | |
| Key Attributes | 80V 60A 104W 6.4mΩ@4.5V 1 N-channel N-Channel QFN-8(5x6) Single FETs, MOSFETs |
| Datasheet | VBsemi Elec SI7852DP-VB |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | QFN-8(5x6) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 80V | |
| Output Capacitance(Coss) | 1.1nF | |
| Current - Continuous Drain(Id) | 60A | |
| Pd - Power Dissipation | 104W | |
| RDS(on) | 6.4mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 57nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | QFN-8(5x6) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 80V | |
| Output Capacitance(Coss) | 1.1nF |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 60A | |
| Pd - Power Dissipation | 104W | |
| RDS(on) | 6.4mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 57nC@10V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- Trench power MOSFET
- 100% Rg and UIS tested
Applications
AI Translation
- Primary-side switch
- Synchronous rectification
- DC/AC inverter
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | QFN-8(5x6) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 80V | |
| Output Capacitance(Coss) | 1.1nF | |
| Current - Continuous Drain(Id) | 60A | |
| Pd - Power Dissipation | 104W | |
| RDS(on) | 6.4mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 57nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | QFN-8(5x6) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 80V | |
| Output Capacitance(Coss) | 1.1nF |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 60A | |
| Pd - Power Dissipation | 104W | |
| RDS(on) | 6.4mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 57nC@10V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- Trench power MOSFET
- 100% Rg and UIS tested
Applications
AI Translation
- Primary-side switch
- Synchronous rectification
- DC/AC inverter
C19190288 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |