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ST STPSC4H065D product image
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ST STPSC4H065D

Manufacturer
ST
MPN
STPSC4H065D
LCSC Part #
C191036
Packaging
TO-220AC-2
Customer #
Key Attributes
1 Independent 650V 1.75V@4A 4A TO-220AC-2 Single Diodes RoHS
DatasheetST STPSC4H065D
RoHS Compliance2 documents available
Alternative Parts5
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Diodes/Rectifiers/Single Diodes
ManufacturerST
PackagingTO-220AC-2
Diode Configuration1 Independent
Operating Junction Temperature Range-40℃~+175℃
Voltage - DC Reverse (Vr) (Max)650V
Voltage - Forward(Vf@If)1.75V@4A
Reverse Leakage Current (Ir)40uA@650V
Non-Repetitive Peak Forward Surge Current38A
Current - Rectified4A
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Introduction

AI Translation

The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

Especially suited for use in PFC applications, this ST SiC diode will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.

Features

AI Translation
  • No reverse recovery charge in application current range
  • Switching behavior independent of temperature
  • High forward surge capability
  • Insulated package TO-220AC Ins:
  • Insulated voltage: 2500 V rms
  • Typical package capacitance: 7 pF

Applications

AI Translation