YONGYUTAI MMBT3906LP
| Manufacturer | YONGYUTAIAsian Brands |
| MPN | MMBT3906LP |
| LCSC Part # | C19089401 |
| Packaging | DFN1006-3L |
| Customer # | |
| Key Attributes | TRANS PNP 40V 200mA DFN1006-3L |
| Datasheet | YONGYUTAI MMBT3906LP |
| RoHS Compliance | 1 documents available |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | YONGYUTAI | |
| Packaging | DFN1006-3L | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 300MHz | |
| Collector - Emitter Voltage VCEO | 40V | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 300 | |
| Current - Collector(Ic) | 200mA | |
| Pd - Power Dissipation | 200mW | |
| Configuration | - | |
| Number | 1 PNP | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 300mV |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | YONGYUTAI | |
| Packaging | DFN1006-3L | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 300MHz | |
| Collector - Emitter Voltage VCEO | 40V | |
| Emitter-Base Voltage VEBO | 5V |
| Type | Description | |
|---|---|---|
| DC Current Gain | 300 | |
| Current - Collector(Ic) | 200mA | |
| Pd - Power Dissipation | 200mW | |
| Configuration | - | |
| Number | 1 PNP | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 300mV |
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | YONGYUTAI | |
| Packaging | DFN1006-3L | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 300MHz | |
| Collector - Emitter Voltage VCEO | 40V | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 300 | |
| Current - Collector(Ic) | 200mA | |
| Pd - Power Dissipation | 200mW | |
| Configuration | - | |
| Number | 1 PNP | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 300mV |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | YONGYUTAI | |
| Packaging | DFN1006-3L | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 300MHz | |
| Collector - Emitter Voltage VCEO | 40V | |
| Emitter-Base Voltage VEBO | 5V |
| Type | Description | |
|---|---|---|
| DC Current Gain | 300 | |
| Current - Collector(Ic) | 200mA | |
| Pd - Power Dissipation | 200mW | |
| Configuration | - | |
| Number | 1 PNP | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 300mV |
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C19089401 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Type | Details |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |



