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JSCJ CJ3400
| Manufacturer | JSCJAsian Brands |
| MPN | CJ3400 |
| LCSC Part # | C19019 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | MOSFET N-CH 30V 5.8A SOT-23 |
| Datasheet | JSCJ CJ3400 |
| Alternative Parts | 4 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSCJ | |
| Packaging | SOT-23 | |
| Output Capacitance(Coss) | 66pF | |
| Ciss-Input Capacitance | 1.05nF | |
| Pd - Power Dissipation | 350mW | |
| Configuration | - | |
| Operating Temperature | - | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 5.8A | |
| Reverse Transfer Capacitance (Crss) | 77pF | |
| RDS(on) | 52mΩ@2.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | - | |
| Vgs | ±12V | |
| Gate Threshold Voltage (Vgs(th)) | 1.4V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSCJ | |
| Packaging | SOT-23 | |
| Output Capacitance(Coss) | 66pF | |
| Ciss-Input Capacitance | 1.05nF | |
| Pd - Power Dissipation | 350mW | |
| Configuration | - | |
| Operating Temperature | - | |
| Drain to Source Voltage | 30V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 5.8A | |
| Reverse Transfer Capacitance (Crss) | 77pF | |
| RDS(on) | 52mΩ@2.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | - | |
| Vgs | ±12V | |
| Gate Threshold Voltage (Vgs(th)) | 1.4V | |
| Type | N-Channel |
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Features
AI Translation
- High dense cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
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100% Authentic · 30-Day Return or Replacement
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSCJ | |
| Packaging | SOT-23 | |
| Output Capacitance(Coss) | 66pF | |
| Ciss-Input Capacitance | 1.05nF | |
| Pd - Power Dissipation | 350mW | |
| Configuration | - | |
| Operating Temperature | - | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 5.8A | |
| Reverse Transfer Capacitance (Crss) | 77pF | |
| RDS(on) | 52mΩ@2.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | - | |
| Vgs | ±12V | |
| Gate Threshold Voltage (Vgs(th)) | 1.4V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSCJ | |
| Packaging | SOT-23 | |
| Output Capacitance(Coss) | 66pF | |
| Ciss-Input Capacitance | 1.05nF | |
| Pd - Power Dissipation | 350mW | |
| Configuration | - | |
| Operating Temperature | - | |
| Drain to Source Voltage | 30V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 5.8A | |
| Reverse Transfer Capacitance (Crss) | 77pF | |
| RDS(on) | 52mΩ@2.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | - | |
| Vgs | ±12V | |
| Gate Threshold Voltage (Vgs(th)) | 1.4V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- High dense cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
C19019 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |