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TECH PUBLIC SI7850DP
| Manufacturer | TECH PUBLICAsian Brands |
| MPN | SI7850DP |
| LCSC Part # | C18197826 |
| Packaging | PDFN-8L(5x6) |
| Customer # | |
| Key Attributes | 34.7W 60V 30A 30mΩ@10V 1 N-channel N-Channel PDFN-8L(5x6) Single FETs, MOSFETs |
| Datasheet | TECH PUBLIC SI7850DP |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | TECH PUBLIC | |
| Packaging | PDFN-8L(5x6) | |
| Output Capacitance(Coss) | 86pF | |
| Ciss-Input Capacitance | 1.378nF | |
| Pd - Power Dissipation | 34.7W | |
| Configuration | - | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 30A | |
| Reverse Transfer Capacitance (Crss) | 64pF | |
| RDS(on) | 30mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 12.6nC@4.5V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | TECH PUBLIC | |
| Packaging | PDFN-8L(5x6) | |
| Output Capacitance(Coss) | 86pF | |
| Ciss-Input Capacitance | 1.378nF | |
| Pd - Power Dissipation | 34.7W | |
| Configuration | - | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 30A | |
| Reverse Transfer Capacitance (Crss) | 64pF | |
| RDS(on) | 30mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 12.6nC@4.5V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This N-channel MOSFET employs advanced trench technology and design to achieve excellent on-resistance (RDS(on)) at low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- VDS = 100 V, ID = 15 A, RDS(ON) < 100 mΩ at VGS = 10 V
- Low gate charge
- RoHS-compliant devices available
- Advanced high cell-density trench technology for ultra-low RDS(ON)
- Excellent package with superior thermal dissipation
Applications
AI Translation
- Load/Power Switch - Interface, Logic Switch - Battery Management for Ultra-Portable Electronics
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | TECH PUBLIC | |
| Packaging | PDFN-8L(5x6) | |
| Output Capacitance(Coss) | 86pF | |
| Ciss-Input Capacitance | 1.378nF | |
| Pd - Power Dissipation | 34.7W | |
| Configuration | - | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 30A | |
| Reverse Transfer Capacitance (Crss) | 64pF | |
| RDS(on) | 30mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 12.6nC@4.5V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | TECH PUBLIC | |
| Packaging | PDFN-8L(5x6) | |
| Output Capacitance(Coss) | 86pF | |
| Ciss-Input Capacitance | 1.378nF | |
| Pd - Power Dissipation | 34.7W | |
| Configuration | - | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 30A | |
| Reverse Transfer Capacitance (Crss) | 64pF | |
| RDS(on) | 30mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 12.6nC@4.5V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This N-channel MOSFET employs advanced trench technology and design to achieve excellent on-resistance (RDS(on)) at low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- VDS = 100 V, ID = 15 A, RDS(ON) < 100 mΩ at VGS = 10 V
- Low gate charge
- RoHS-compliant devices available
- Advanced high cell-density trench technology for ultra-low RDS(ON)
- Excellent package with superior thermal dissipation
Applications
AI Translation
- Load/Power Switch - Interface, Logic Switch - Battery Management for Ultra-Portable Electronics
C18197826 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |