Images for reference only
EDA ModelsEasyEDA
JSMSEMI STD12NE06LT4-JSM
| Manufacturer | JSMSEMIAsian Brands |
| MPN | STD12NE06LT4-JSM |
| LCSC Part # | C18194047 |
| Packaging | TO-252 |
| Customer # | |
| Key Attributes | 60V 20A 3V 31W 36mΩ@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS |
| Datasheet | JSMSEMI STD12NE06LT4-JSM |
| RoHS Compliance | 6 documents available |
| Alternative Parts | 20 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 20A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 31W | |
| RDS(on) | 36mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 45.3pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.15nF | |
| Gate Charge(Qg) | 20.3nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 20A | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 31W | |
| RDS(on) | 36mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 45.3pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.15nF | |
| Gate Charge(Qg) | 20.3nC@10V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This N-channel MOSFET utilizes advanced trench technology and design to deliver excellent on-resistance (RDS(on)) while maintaining low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- VDS = 60V, ID = 20A, RDS(ON) < 36mΩ at VGS = 10V
- Low gate charge
- RoHS-compliant devices available
- Advanced high cell density trench technology for ultra-low RDS(ON)
- Thermally enhanced package
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
Out of Stock
Notify Me
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.307 | $ 0.31 |
| 200+ | $ 0.1225 | $ 24.50 |
| 500+ | $ 0.1184 | $ 59.20 |
| 1,000+ | $ 0.1164 | $ 116.40 |
Standard Packaging2500/Full Reel | ||
Better price for more quantity?
$
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 20A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 31W | |
| RDS(on) | 36mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 45.3pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.15nF | |
| Gate Charge(Qg) | 20.3nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSMSEMI | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 20A | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 31W | |
| RDS(on) | 36mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 45.3pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.15nF | |
| Gate Charge(Qg) | 20.3nC@10V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This N-channel MOSFET utilizes advanced trench technology and design to deliver excellent on-resistance (RDS(on)) while maintaining low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- VDS = 60V, ID = 20A, RDS(ON) < 36mΩ at VGS = 10V
- Low gate charge
- RoHS-compliant devices available
- Advanced high cell density trench technology for ultra-low RDS(ON)
- Thermally enhanced package
C18194047 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| 2SK2018-JSM | JSMSEMI | TO-252 | 2,500 | $ 0.2674 | ||
| F3055L-JSM | JSMSEMI | TO-252 | 0 | $ 0.307 | ||
| 2SK2231-JSM | JSMSEMI | TO-252 | 0 | $ 0.307 | ||
| FS10ASJ-06F-JSM | JSMSEMI | TO-252 | 0 | $ 0.307 | ||
| MTD3055EL-JSM | JSMSEMI | TO-252 | 0 | $ 0.307 | ||
| P5506BDG-JSM | JSMSEMI | TO-252 | 0 | $ 0.307 | ||
| SPD09N05-JSM | JSMSEMI | TO-252 | 0 | $ 0.307 | ||
| NTD3055-150T4G-JSM | JSMSEMI | TO-252 | 0 | $ 0.307 | ||
| IRFR024TRPBF-JSM | JSMSEMI | TO-252 | 0 | $ 0.307 | ||
| 14N05L-JSM | JSMSEMI | TO-252 | 0 | $ 0.307 | ||
| BUK92150-55A-JSM | JSMSEMI | TO-252 | 0 | $ 0.307 | ||
| NTD3055-094T4G-JSM | JSMSEMI | TO-252 | 0 | $ 0.307 | ||
| MTD2955VG-JSM | JSMSEMI | TO-252 | 0 | $ 0.307 | ||
| MTD3055VLG-JSM | JSMSEMI | TO-252 | 0 | $ 0.307 | ||
| 2SK2018-01L-JSM | JSMSEMI | TO-252 | 0 | $ 0.307 | ||
| AP9977GH-JSM | JSMSEMI | TO-252 | 0 | $ 0.307 | ||
| 2SK974-JSM | JSMSEMI | TO-252 | 0 | $ 0.307 | ||
| 2SK3615-JSM | JSMSEMI | TO-252 | 0 | $ 0.307 | ||
| ZXMN7A11KTC-JSM | JSMSEMI | TO-252 | 0 | $ 0.307 | ||
| SM6056NSU-JSM | JSMSEMI | TO-252 | 0 | $ 0.307 |